Semiconductor device and manufacturing method of same
A semiconductor device includes a semiconductor substrate; an insulating film arranged on the semiconductor substrate; an electrode that contacts a portion of a side surface of the insulating film; a first passivation film that is arranged extending from the electrode to the insulating film, and contacts a surface of the insulating film, and contacts a surface of the electrode; and a second passivation film that is arranged on the first passivation film. A difference between a linear expansion coefficient of the first passivation film and a linear expansion coefficient of the insulating film is smaller than a difference between the linear expansion coefficient of the first passivation film and a linear expansion coefficient of the electrode, and a position where the first passivation film contacts a boundary between the electrode and the insulating film is positioned lower than an upper surface of the insulating film.
1. A semiconductor device manufacturing method comprising:
forming an insulating film on a semiconductor substrate;
forming an open portion in the insulating film;
forming an electrode in the open portion;
forming a first passivation film that contacts a surface of the insulating film and contacts a surface of the electrode, extending from the electrode to the insulating film, the first passivation film being arranged on the electrode and the insulating film; and
forming a second passivation film on the first passivation film, the second passivation film being arranged on the first passivation film and directly on an entire upper surface of the electrode, wherein
the insulating film, the first passivation film, and the electrode are formed of material in which a difference between a linear expansion coefficient of the first passivation film and a linear expansion coefficient of the insulating film is smaller than a difference between the linear expansion coefficient of the first passivation film and a linear expansion coefficient of the electrode,
when forming the electrode, the electrode is formed in the open portion of the insulating film such that a portion of a side surface of the open portion of the insulating film is exposed on a surface,
the linear expansion coefficient of the first passivation film is larger than the linear expansion coefficient of the insulating film, and the linear expansion coefficient of the first passivation film is smaller than the linear expansion coefficient of the electrode,
a linear expansion coefficient of the second passivation film is larger than the linear expansion coefficient of the first passivation film, and
the difference between the linear expansion coefficient of the first passivation film and the linear expansion coefficient of the insulating film is smaller than a difference between the linear expansion coefficient of the first passivation film and the linear expansion coefficient of the second passivation film.
2. A semiconductor device comprising:
a semiconductor substrate;
an insulating film arranged on the semiconductor substrate;
an electrode that contacts a portion of a side surface of the insulating film;
a first passivation film that is arranged extending from the electrode to the insulating film, and contacts a surface of the insulating film, and contacts a surface of the electrode; and
a second passivation film that is arranged on the first passivation film and directly on an entire upper surface of the electrode, wherein
a difference between a linear expansion coefficient of the first passivation film and a linear expansion coefficient of the insulating film is smaller than a difference between the linear expansion coefficient of the first passivation film and a linear expansion coefficient of the electrode,
a position where the first passivation film contacts a boundary between the electrode and the insulating film is positioned lower than an upper surface of the insulating film,
a side surface of the electrode contacts the side surface of the insulating film and extends upward away from the side surface of the insulating film, and
the first passivation film is arranged on the side surface of the insulating film and the side surface of the electrode facing the side surface of the insulating film.