Method to fabricate portable electron source based on nitrogen incorporated ultrananocrystalline diamond (N-UNCD)
A source cold cathode field emission array (FEA) source based on ultra-nanocrystalline diamond (UNCD) field emitters. This system was constructed as an alternative for detection of obscured objects and material. Depending on the geometry of the given situation a flat-panel source can be used in tomography, radiography, or tomosynthesis. Furthermore, the unit can be used as a portable electron or X-ray scanner or an integral part of an existing detection system. UNCD field emitters show great field emission output and can be deposited over large areas as the case with carbon nanotube “forest” (CNT) cathodes. Furthermore, UNCDs have better mechanical and thermal properties as compared to CNT tips which further extend the lifetime of UNCD based FEA.
1. A field emitter array device comprising,
a wafer substrate;
an electrical insulator layer disposed on the wafer substrate;
a plurality of metal tabs for establishing an electrical circuit;
a flat panel emitter layer comprising ultrananocrystalline diamond; and
a two dimensional electron extraction grid disposed above the flat panel emitter layer, thereby forming a two dimensional field emitter array device.
2. The field emitter array as defined in claim 1 wherein the wafer substrate comprises silicon.
3. The field emitter array as defined in claim 1 wherein the electrical insulator layer comprises Si 3 N 4 .
4. The field emitter array as defined in claim 1 further including a collimator, an X-ray target, a focusing electrode, a spacer and a lead shield, thereby forming an X-ray system for inspection of a specimen.
5. The field emitter array as defined in claim 1 wherein the metal tabs comprise tungsten tabs.
6. The field emitter array as defined in claim 1 wherein the electron extraction grid comprises copper.
7. The field emitter array as defined in claim 6 wherein the electron extraction grid includes openings, thereby enabling electron extraction therethrough.
8. The field emitter array as defined in claim 7 having a photoresist layer disposed adjacent the openings.
9. A method of manufacturing a field emitter array device, comprising the steps of,
disposing a wafer substrate for forming the field emitter array device thereon;
forming an electrical insulator layer on the wafer substrate;
forming a plurality of metal tabs on the electrical insulator layer;
forming a flat panel emitter layer comprising at least one of nitrogen incorporated nanocrystalline diamond and boron doped ultrananocrystalline diamond; and
forming above the flat panel emitter layer an electron extraction grid.
10. The method as defined in claim 9 wherein the flat panel emitter layer comprises nitrogen incorporated nanocrystalline diamond.
11. The method as defined in claim 9 wherein the electron extraction grid comprises copper disposed on SiO 2 .
12. The method as defined in claim 9 wherein the electrical insulator layer is deposited by LPCVD.
13. The method as defined in claim 9 wherein the electrical insulator layer comprises Si 3 N 4 .
14. The method as defined in claim 9 wherein the metal tabs are deposited by at least one of the sputtering and electron beam evaporation.
15. The method as defined in claim 9 further including the step of forming components of an X-ray system coupled to the field emitter array.
16. The method as defined in claim 15 wherein the X-ray system includes a collimator, an X-ray target, a focusing electrode, a spacer and a lead shield, thereby forming an X-ray system for inspection of a specimen.