Transparent conductive film and manufacturing method therefor

1. A transparent conductive film, comprising

a flexible transparent base; and

a transparent conductive layer formed on the flexible transparent base and including a crystalline indium/tin composite oxide,

wherein a compressive residual stress of the transparent conductive layer is 0.7 to 2 GPa,

wherein the transparent conductive layer is formed by a sputtering method,

wherein the transparent conductive layer is crystallized by heating, and a dimensional change in at least one direction in a plane of the layer with respect to a dimension before crystallization is −0.3% to −1.5%,

the flexible transparent base comprises a transparent substrate film and an undercoat layer, and

the undercoat layer comprises an organic substance or a mixture of an inorganic substance and an organic substance.

2. The transparent conductive film according to claim 1 , wherein the content of crystals having a maximum grain size of 300 nm or less is 95% by area or more.

3. The transparent conductive film according to claim 1 , wherein the content of crystals having a maximum grain size of 200 nm or less is more than 50% by area.

4. The transparent conductive film according to claim 1 , wherein the content of crystals having a maximum grain size of 100 nm or less is more than 5% by area, and the maximum grain size of remaining crystals falls within a distribution range of more than 100 nm and 200 nm or less.

5. The transparent conductive film according to claim 1 , wherein the thickness of the transparent conductive layer is 10 to 100 nm.