Liquid crystal display device and method for manufacturing the same
View Patent ↗Provided is a method to manufacture a liquid crystal display device in which a contact hole for the electrical connection of the pixel electrode and one of the source and drain electrode of a transistor and a contact hole for the processing of a semiconductor layer are formed simultaneously. The method contributes to the reduction of a photography step. The transistor includes an oxide semiconductor layer where a channel formation region is formed.
1. A method for manufacturing a liquid crystal display device, the method comprising:
forming a gate electrode over a substrate;
forming a gate insulating layer over the gate electrode;
forming an oxide semiconductor layer over the gate insulating layer;
forming a source electrode and a drain electrode over the oxide semiconductor layer;
forming an insulating layer over the source electrode, the drain electrode, and the oxide semiconductor layer;
forming a first contact hole in the insulating layer to expose part of one of the source electrode and the drain electrode;
forming a second contact hole in the gate insulating layer, the oxide semiconductor layer, and the insulating layer; and
forming a pixel electrode over the first contact hole, the pixel electrode being electrically connected to the part of the one of the source electrode and the drain electrode,
wherein the first contact hole and the second contact hole are formed simultaneously, and
wherein a portion of the insulating layer is provided between the pixel electrode and a side surface of the one of the source electrode and the drain electrode.
2. The method according to claim 1 , wherein the oxide semiconductor layer comprises an element selected from gallium and indium.
3. The method according to claim 1 ,
wherein the step of forming the pixel electrode is performed so as to cover the second contact hole.
4. The method according to claim 1 , wherein the pixel electrode is in contact with a side surface of the oxide semiconductor layer in the second contact hole.
5. The method according to claim 1 , wherein the pixel electrode is in contact with a side surface of the gate insulating layer in the second contact hole.
6. The method according to claim 1 , further comprising a step of forming a base layer before the step of forming the gate electrode,
wherein the step of forming the second contact hole is performed so that the base layer is exposed in the second contact hole.
7. The method according to claim 6 , wherein the pixel electrode is in contact with the base layer in the second contact hole.
8. A method for manufacturing a liquid crystal display device, the method comprising:
forming a separation layer over a substrate;
forming a gate electrode over the separation layer;
forming a gate insulating layer over the gate electrode;
forming a oxide semiconductor layer over the gate insulating layer;
forming a source electrode and a drain electrode over the oxide semiconductor layer;
forming an insulating layer over the source electrode, the drain electrode, and the oxide semiconductor layer;
forming a first contact hole in the insulating layer to expose part of one of the source electrode and the drain electrode;
forming a second contact hole in the gate insulating layer, the oxide semiconductor layer, and the insulating layer; and
forming a pixel electrode over the first contact hole, the pixel electrode being electrically connected to the part of the one of the source electrode and the drain electrode; and
separating the gate electrode, the gate insulating layer, the oxide semiconductor layer, the source electrode, the drain electrode, the insulating layer, and the pixel electrode from the substrate,
wherein the first contact hole and the second contact hole are formed simultaneously, and
wherein a portion of the insulating layer is provided between the pixel electrode and a side surface of the one of the source electrode and the drain electrode.
9. The method according to claim 8 , wherein the oxide semiconductor layer comprises an element selected from gallium and indium.
10. The method according to claim 8 ,
wherein the step of forming the pixel electrode is performed so as to cover the second contact hole.
11. The method according to claim 8 , wherein the pixel electrode is in contact with a side surface of the oxide semiconductor layer in the second contact hole.
12. The method according to claim 8 , wherein the pixel electrode is in contact with a side surface of the gate insulating layer in the second contact hole.
13. The method according to claim 8 , further comprising a step of forming a base layer before the step of forming the gate electrode,
wherein the step of forming the second contact hole is performed so that the base layer is exposed in the second contact hole.
14. The method according to claim 13 , wherein the pixel electrode is in contact with the base layer in the second contact hole.
15. A method for manufacturing a liquid crystal display device, the method comprising:
forming a gate electrode over a substrate;
forming a gate insulating layer over the gate electrode;
forming a first oxide semiconductor layer over the gate insulating layer;
forming a second oxide semiconductor layer over the first oxide semiconductor layer;
forming a source electrode and a drain electrode over the second oxide semiconductor layer;
forming an insulating layer over the source electrode, the drain electrode, and the second oxide semiconductor layer;
forming a first contact hole in the insulating layer to expose part of one of the source electrode and the drain electrode;
forming a second contact hole in the gate insulating layer, the first oxide semiconductor layer, and the insulating layer; and
forming a pixel electrode over the first contact hole, the pixel electrode being electrically connected to the part of the one of the source electrode and the drain electrode,
wherein the first contact hole and the second contact hole are formed simultaneously, and
wherein a portion of the insulating layer is provided between the pixel electrode and a side surface of the one of the source electrode and the drain electrode.
16. The method according to claim 15 , wherein the first oxide semiconductor layer and the second oxide semiconductor layer each comprise an element selected from gallium and indium.
17. The method according to claim 15 , wherein the second oxide semiconductor layer is thicker than the first oxide semiconductor layer.
18. The method according to claim 15 ,
wherein the step of forming the pixel electrode is performed so as to cover the second contact hole.
19. The method according to claim 15 , wherein the pixel electrode is in contact with a side surface of the first oxide semiconductor layer and a side surface of the second oxide semiconductor layer in the second contact hole.
20. The method according to claim 15 , wherein the pixel electrode is in contact with a side surface of the gate insulating layer in the second contact hole.
21. The method according to claim 15 , further comprising a step of forming a base layer before the step of forming the gate electrode,
wherein the step of forming the second contact hole is performed so that the base layer is exposed in the second contact hole.
22. The method according to claim 21 , wherein the pixel electrode is in contact with the base layer in the second contact hole.