Semiconductor device using a nitride semiconductor
To provide a semiconductor device having improved characteristics. The semiconductor device has, over a substrate thereof, a first buffer layer (GaN), a second buffer layer (AlGaN), a channel layer, and a barrier layer, a trench penetrating through the barrier layer and reaching the middle of the channel layer, a gate electrode placed in the trench via a gate insulating film, and a source electrode and a drain electrode formed on both sides of the gate electrode respectively. By a coupling portion in a through-hole reaching the first buffer layer, the buffer layer and the source electrode are electrically coupled to each other. Due to a two-dimensional electron gas produced in the vicinity of the interface between these two buffer layers, the semiconductor device can have an increased threshold voltage and improved normally-off characteristics.
1. A semiconductor device, comprising:
a first nitride semiconductor layer formed over a substrate;
a second nitride semiconductor layer formed over the first nitride semiconductor layer;
a third nitride semiconductor layer formed over the second nitride semiconductor layer;
a fourth nitride semiconductor layer formed over the third nitride semiconductor layer;
a trench penetrating through the fourth nitride semiconductor layer and reaching the middle of the third nitride semiconductor layer;
a gate electrode placed in the trench via a gate insulating film; and
a first electrode and a second electrode formed over the fourth nitride semiconductor layer on both sides of the gate electrode, respectively,
wherein the fourth nitride semiconductor layer has an electron affinity smaller than that of the third nitride semiconductor layer,
wherein the third nitride semiconductor layer has an electron affinity greater than that of the second nitride semiconductor layer,
wherein the second nitride semiconductor layer has an electron affinity smaller than that of the first nitride semiconductor layer, and
wherein the first electrode is coupled to the first nitride semiconductor layer via a through-hole reaching the first nitride semiconductor layer.
2. The semiconductor device according to claim 1 ,
wherein the first electrode has a potential equal to that of the first nitride semiconductor layer.
3. The semiconductor device according to claim 1 ,
wherein the potential of each of the first electrode and the first nitride semiconductor layer is a ground potential.
4. The semiconductor device according to claim 1 ,
wherein the first electrode is coupled to the first nitride semiconductor layer via a first coupling portion.
5. The semiconductor device according to claim 4 ,
wherein the first coupling portion is placed in the through-hole penetrating through the fourth nitride semiconductor layer, the third nitride semiconductor layer, and the second nitride semiconductor layer and reaching the first nitride semiconductor layer.
6. The semiconductor device according to claim 5 ,
wherein the first coupling portion has thereover the first electrode.
7. The semiconductor device according to claim 1 ,
wherein the second nitride semiconductor layer is an AlGaN layer and the first nitride semiconductor layer is a GaN layer.
8. The semiconductor device according to claim 7 ,
wherein the fourth nitride semiconductor layer is an AlGaN layer and the third nitride semiconductor layer is a GaN layer.
9. The semiconductor device according to claim 8 ,
wherein the fourth nitride semiconductor layer has an Al content more than that of the second nitride semiconductor layer.
10. The semiconductor device according to claim 7 ,
wherein the second nitride semiconductor layer has an Al content of 3% or more but not more than 8%.
11. A semiconductor device, comprising:
a first nitride semiconductor layer formed over a substrate;
a second nitride semiconductor layer formed over the first nitride semiconductor layer;
a third nitride semiconductor layer formed over the second nitride semiconductor layer;
a fourth nitride semiconductor layer formed over the third nitride semiconductor layer;
a trench penetrating through the fourth nitride semiconductor layer and reaching the middle of the third nitride semiconductor layer;
a gate electrode placed in the trench via a insulating film; and
a first electrode and a second electrode formed over the fourth nitride semiconductor on both sides of the gate electrode, respectively,
wherein the fourth nitride semiconductor layer has an electron affinity smaller than that of the third nitride semiconductor layer,
wherein the third nitride semiconductor layer has an electron affinity greater than that of the second nitride semiconductor layer,
wherein the second nitride semiconductor layer has an electron affinity smaller than that of the first nitride semiconductor layer,
wherein the first electrode is coupled to the first nitride semiconductor layer,
wherein the substrate has a first region and a second region,
wherein the gate electrode, the first electrode, and the second electrode are formed in the first region,
wherein the second region is an element isolation region formed in the fourth nitride semiconductor layer and the third nitride semiconductor layer,
wherein the first electrode and the first nitride semiconductor layer are coupled to each other via a first coupling portion, and
wherein the first coupling portion is placed in a through-hole penetrating through the element isolation region and the second nitride semiconductor layer and reaching the first nitride semiconductor layer.
12. The semiconductor device according to claim 11 ,
wherein the first coupling portion has thereover a first terminal portion to be electrically coupled to the first electrode.
13. The semiconductor device according to claim 11 ,
wherein the second nitride semiconductor layer is an AlGaN layer and the first nitride semiconductor layer is a GaN layer.
14. The semiconductor device according to claim 13 ,
wherein the fourth nitride semiconductor layer is an AlGaN layer and the third nitride semiconductor layer is a GaN layer.
15. The semiconductor device according to claim 14 ,
wherein the fourth nitride semiconductor layer has an Al content more than that of the second nitride semiconductor layer.
16. The semiconductor device according to claim 13 ,
wherein the second nitride semiconductor layer has an Al content of 3% or more but not more than 8%.
17. A semiconductor device, comprising:
a first nitride semiconductor layer formed over a substrate;
a second nitride semiconductor layer formed over the first nitride semiconductor layer;
a third nitride semiconductor layer formed over the second nitride semiconductor layer;
a fourth nitride semiconductor layer formed over the third nitride semiconductor layer;
a trench penetrating through the fourth nitride semiconductor layer and reaching the middle of the third nitride semiconductor layer;
a gate electrode placed in the trench via a gate insulating film;
a first electrode and a second electrode formed over the fourth nitride semiconductor layer on both sides of the gate electrode, respectively, and
a first coupling portion placed in a through-hole starting from the back surface side, which is a lower side, of the substrate, penetrating through the substrate and reaching the first nitride semiconductor layer,
wherein the fourth nitride semiconductor layer has an electron affinity smaller than that of the third nitride semiconductor layer,
wherein the third nitride semiconductor layer has an electron affinity greater than that of the second nitride semiconductor layer, and
wherein the second nitride semiconductor layer has an electron affinity smaller than that of the first nitride semiconductor layer.
18. The semiconductor device according to claim 17 ,
wherein the first electrode has a potential equal to that of the first nitride semiconductor layer.
19. The semiconductor device according to claim 17 ,
wherein the fourth nitride semiconductor layer and the second nitride semiconductor layer are each an AlGaN layer and the third nitride semiconductor layer and the first nitride semiconductor layer are each a GaN layer.
20. The semiconductor device according to claim 19 ,
wherein the fourth nitride semiconductor layer has an Al content greater than that of the second nitride semiconductor layer.