Semiconductor light emitting device
In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.
1. A light emitting apparatus including a light emitting module, wherein the light emitting module comprises:
a plurality of light emitting devices;
a submount whereon the plurality of light emitting devices is mounted;
wherein at least one of values of characteristics such as color coordinates, brightness, forward voltage, and wavelength of a light emitted from the light emitting devices are not identical;
wherein each light emitting device of the plurality of light emitting devices comprises:
a light emitting structure including a conductive substrate, a first-conductivity type semiconductor layer, an active layer, and a second-conductivity semiconductor layer;
a first electrode and a second electrode connected to the first-conductivity type semiconductor layer and the second-conductivity type semiconductor layer, respectively; and
an insulator electrically separating the second electrode from the first electrode,
wherein the first electrode includes:
a contact layer electrically connected to the first-conductivity type semiconductor layer between the conductive substrate and the first-conductivity type semiconductor layer and extending to be exposed to the outside of the light emitting device,
wherein the second electrode includes:
at least one conductive via passing through the first-conductivity type semiconductor layer and the active layer and connected to the inside of the second-conductivity type semiconductor layer; and
wherein the insulator is extended to electrically separate the at least one conductive via from the first conductivity type semiconductor layer and the active layer,
wherein the light emitting device further comprises an etch stop layer disposed on a region in which the light emitting structure is not disposed over the top surface of the contact layer, and
wherein a side surface of the etch stop layer, a side surface of the contact layer, and a side surface of the insulator are substantially coplanar in a thickness direction of the light emitting device.
2. The light emitting apparatus of claim 1 , wherein the at least one conductive via comprises a plurality of conductive vias that pass through the first-conductivity type semiconductor layer and the active layer, have a radius of about 1 to about 50 um, and are uniformly disposed in the light emitting structure, and the spacing between two adjacent conductive vias is in the range of about 5 to about 500 um.
3. The light emitting apparatus of claim 1 , wherein the light emitting devices further comprise a resin encapsulation part packaging the light emitting structure and having at least one of a yellow phosphor, a green phosphor, a red phosphor, or a quantum dot.
4. The light emitting apparatus of claim 3 , wherein the resin encapsulation part has a quantum dot, and the quantum dot has a nano crystal particle composed of a core and a shell, and the core size is in the range of about 2 nm to about 100 nm, and wherein the quantum dot is formed by a heterojunction of at least two kinds of semiconductors among group II-VI compound semiconductors, group III-V compound semiconductors, and group IV semiconductors.
5. The light emitting apparatus of claim 1 , wherein the light emitting devices emit a UV light or a light in the range of approximately 360˜460 nm.
6. The light emitting apparatus of claim 1 , wherein a contact area between the second electrode and the second-conductivity type semiconductor layer is in a range of about 0.615% to about 15.68% of an area of the light emitting structure.
7. The light emitting apparatus of claim 1 , wherein the number of conductive vias is about 5 to about 150.
8. A vehicle head light including the light emitting apparatus of claim 1 .