Organic light emitting diode device and method for fabricating the same

1. An organic light emitting diode device, comprising:

a substrate divided into:

an active area including a plurality of pixel regions; and

a non-active area formed outside the active area;

a switching thin film transistor and riving thin film transistor formed at each of the pixel regions on the substrate;

a planarization layer formed on the substrate including the switching thin film transistor and the driving thin film transistor, the planarization layer comprising a moisture blocking portion at the non-active area of the substrate, the moisture blocking portion comprising a same material as the planarization layer, the planarization layer being configured to absorb moisture in a direction up to the moisture blocking portion;

a first electrode formed on the planarization layer, and connected to a drain electrode of the driving thin film transistor;

a bank formed in the non-active area outside each pixel region of the substrate including the first electrode;

an organic light emitting layer formed on the first electrode, and provided for each pixel region in a separated manner; and

a second electrode formed on an entire surface of the substrate including the organic light emitting layer.

2. The organic light emitting diode device of claim 1 , wherein the moisture blocking portion is formed in at least one in number, along an edge region of the non-active area of the substrate.

3. The organic light emitting diode device of claim 1 , wherein the moisture blocking portion is formed at the planarization layer corresponding to driving circuit lines, in the non-active area of the substrate.

4. The organic light emitting diode device of claim 3 , wherein the moisture blocking portion is formed at the planarization layer positioned above a driving circuit line to which a direct current is applied, among the gate driving circuit lines.

5. The organic light emitting diode device of claim 1 , wherein an auxiliary electrode pattern, electrically connected to the first electrode, is formed on the planarization layer positioned in the non-active area of the substrate.

6. The organic light emitting diode device of claim 1 , wherein the substrate comprises one of: a glass substrate, a flexible glass substrate, and a plastic substrate.

7. The organic light emitting diode device of claim 1 , further comprising a first passivation layer completely covering the second electrode.

8. The organic light emitting diode device of claim 1 , further comprising:

an organic layer over the first passivation layer; and

a second passivation layer completely covering the organic layer.

9. The organic light emitting diode device of claim 1 , further comprising an auxiliary electrode pattern between and directly contacting the planarization layer and the second electrode.

10. The organic light emitting diode device of claim 1 , further comprising an auxiliary electrode pattern between and directly contacting the planarization layer and the second electrode.

11. An organic light emitting diode device, comprising:

a substrate divided into:

an active area including a plurality of pixel regions; and

a non-active area formed outside the active area;

a switching thin film transistor and a driving thin film transistor at each of the pixel regions on the substrate;

a planarization layer on the substrate including the switching thin film transistor and the driving thin film transistor, the planarization layer comprising a moisture blocking portion at the non-active area of the substrate, the moisture blocking portion of the planarization layer comprising a same material as the planarization layer, the planarization layer being configured to absorb moisture in a direction up to the moisture blocking portion the planarization layer in the active area of the substrate being separated from the planarization layer the non-active area of the substrate by the moisture blocking portion;

a first electrode on the planarization layer, and connected to a drain electrode of the driving thin film transistor;

a bank in the non-active area outside each pixel region of the substrate including the first electrode;

an organic light emitting layer on the first electrode, and provided for each pixel region in a separated manner; and

a second electrode on an entire surface of the substrate including the organic light emitting layer.

12. The organic light emitting diode device of claim 11 , wherein the moisture blocking portion is formed in at least one in number, along an edge region of the non-active area of the substrate.

13. The organic light emitting diode device of claim 11 , wherein the moisture blocking portion is formed at the planarization layer corresponding to driving circuit lines, in the non-active area of the substrate.

14. The organic light emitting diode device of claim 13 , wherein the moisture blocking portion is formed at the planarization layer positioned above a driving circuit line to which a direct current is applied, among the gate driving circuit lines.

15. The organic light emitting diode device of claim 11 , wherein an auxiliary electrode pattern, electrically connected to the first electrode, is formed on the planarization layer positioned in the non-active area of the substrate.

16. The organic light emitting diode device of claim 11 , wherein the substrate comprises one of: a glass substrate, a flexible glass substrate, and a plastic substrate.

17. The organic light emitting diode device of claim 11 , further comprising a first passivation layer completely covering the second electrode.

18. The organic light emitting diode device of claim 11 , further comprising:

an organic layer over the first passivation layer; and

a second passivation layer completely covering the organic layer.