Semiconductor device
A semiconductor device having a capacitor which includes a first electrode electrically coupled to a transistor and a second electrode separate from the first electrode and covered with an interlayer insulating film, in which a plurality of coupling holes are formed in the interlayer insulating film and are in contact with the second electrode at the lower ends; and, when the capacitance of the second electrode is represented by C [nF] and the total area of the lower ends of the coupling holes is represented by A [μm 2 ], the following expression (1) is satisfied. C/A ≦1.98 [nF/μm 2 ] (1) The elution of the second electrode constituting the capacitor at the lower ends of the coupling holes is suppressed.
1. A semiconductor device comprising:
a substrate;
a transistor which is formed over the substrate;
a capacitor which is electrically coupled to the transistor and includes a first electrode electrically coupled to the transistor, a second electrode separate from the first electrode, and a capacitance insulating film situated between the first electrode and the second electrode;
an insulating cover film which covers the second electrode;
a plurality of coupling holes which are formed in the insulating cover film and whose lower ends are each in contact with the second electrode; and
vias which are embedded in the coupling holes,
wherein, when the capacitance of the second electrode is represented by C [nF] and the total area of the lower ends of the coupling holes is represented by A [μm 2 ], the following expression (1) is satisfied
C/A≦ 1.98 [nF/μm 2 ]. (1)
2. The semiconductor device according to claim 1 ,
wherein the second electrode is formed from a metal having an electric resistivity at 25° C. of 1.68 to 28.00 μΩ·cm.
3. The semiconductor device according to claim 2 ,
wherein the metal is tungsten.
4. The semiconductor device according to claim 2 ,
wherein the metal is copper.
5. The semiconductor device according to claim 1 further comprising interlayer insulating films over the substrate,
wherein the capacitor is formed by using recessed parts formed in the interlayer insulating films.
6. The semiconductor device according to claim 5 , the width of the upper end of each of the coupling holes is 45 nm or less.