Semiconductor device and method for manufacturing semiconductor device
To provide a semiconductor device in which the threshold value is controlled. Furthermore, to provide a semiconductor device in which a deterioration in electrical characteristics which becomes more noticeable as a transistor is miniaturized can be suppressed. The semiconductor device includes a first semiconductor film, a source electrode and a drain electrode electrically connected to the first semiconductor film, a gate insulating film, and a gate electrode in contact with the gate insulating film. The gate insulating film includes a first insulating film and a trap film, and charge is trapped in a charge trap state in an interface between the first insulating film and the trap film or inside the trap film.
1. A method for manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film;
forming an electrode electrically connected to the semiconductor film;
forming a gate insulating film over the semiconductor film, the gate insulating film having a stacked structure comprising a first insulating film and a trap film;
forming a gate electrode over the gate insulating film; and
keeping a potential difference between the gate electrode and the electrode for one second or longer at a temperature higher than or equal to 125° C. and lower than or equal to 450° C., so that charges are trapped in the trap film and a threshold value is shifted from an initial value,
wherein the trap film is an insulating film containing nitrogen and silicon.
2. The method for manufacturing a semiconductor device according to claim 1 ,
wherein the gate insulating film further comprises a second insulating film, and
wherein each of the first insulating film and the second insulating film is an oxide insulating film.
3. The method for manufacturing a semiconductor device according to claim 1 , wherein the insulating film containing nitrogen and silicon is a silicon nitride film.
4. The method for manufacturing a semiconductor device according to claim 1 , wherein the semiconductor film is an oxide semiconductor film.
5. The method for manufacturing a semiconductor device according to claim 4 , wherein the oxide semiconductor film has a stacked structure.
6. The method for manufacturing a semiconductor device according to claim 1 , further comprising the steps of:
packaging the semiconductor device whose threshold value is shifted.
7. A method for manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film;
forming an electrode electrically connected to the semiconductor film;
forming a gate insulating film over the semiconductor film, the gate insulating film having a stacked structure comprising a first insulating film and a trap film;
forming a gate electrode over the gate insulating film; and
keeping a potential of the gate electrode higher than a potential of the electrode for one second or longer at a temperature higher than or equal to 125° C. and lower than or equal to 450° C., so that electrons are trapped in the trap film and a threshold value is shifted in a positive direction,
wherein the trap film is an insulating film containing nitrogen and silicon.
8. The method for manufacturing a semiconductor device according to claim 7 ,
wherein the gate insulating film further comprises a second insulating film, and
wherein each of the first insulating film and the second insulating film is an oxide insulating film.
9. The method for manufacturing a semiconductor device according to claim 7 , wherein the insulating film containing nitrogen and silicon is a silicon nitride film.
10. The method for manufacturing a semiconductor device according to claim 7 , wherein the semiconductor film is an oxide semiconductor film.
11. The method for manufacturing a semiconductor device according to claim 10 , wherein the oxide semiconductor film has a stacked structure.
12. The method for manufacturing a semiconductor device according to claim 7 , further comprising the steps of:
packaging the semiconductor device whose threshold value is shifted.
13. A method for manufacturing a semiconductor device comprising the steps of:
forming a semiconductor film;
forming an electrode electrically connected to the semiconductor film;
forming a gate insulating film over the semiconductor film, the gate insulating film having a stacked structure comprising a first insulating film and a trap film;
forming a gate electrode over the gate insulating film; and
keeping a potential of the gate electrode lower than a potential of the electrode for one second or longer at a temperature higher than or equal to 125° C. and lower than or equal to 450° C., so that holes are trapped in the trap film and a threshold value is shifted in a negative direction,
wherein the trap film is an insulating film containing nitrogen and silicon.
14. The method for manufacturing a semiconductor device according to claim 13 ,
wherein the gate insulating film further comprises a second insulating film, and
wherein each of the first insulating film and the second insulating film is an oxide insulating film.
15. The method for manufacturing a semiconductor device according to claim 13 , wherein the insulating film containing nitrogen and silicon is a silicon nitride film.
16. The method for manufacturing a semiconductor device according to claim 13 , wherein the semiconductor film is an oxide semiconductor film.
17. The method for manufacturing a semiconductor device according to claim 16 , wherein the oxide semiconductor film has a stacked structure.
18. The method for manufacturing a semiconductor device according to claim 13 , further comprising the steps of:
packaging the semiconductor device whose threshold value is shifted.