Nitride light emitting diode and fabrication method thereof
View Patent ↗An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., In x Al y Ga 1-x-y N) over the N-type conductive layer or the P-type conductive layer till part of current conduction path is exposed through high-temperature H 2 in-situ etching in the reacting furnace and to grow the N-type or the P-type conductive layer for coverage. This design for forming a current modulation layer without second epitaxial growth provides the injected current with a better spreading path in the N-type conductive layer and the P-type conductive layer, which more effectively and uniformly injects the current to the active layer and improves luminous efficiency.
1. A nitride light emitting diode, comprising an N-type conductive layer, a P-type conductive layer, and a light-emitting layer between the N-type conductive layer and the P-type conductive layer; a current modulation layer in at least one of the N-type conductive layer or the P-type conductive layer and comprising a nitride insulation material layer with opening structures, wherein the opening structure is configured for current conduction and is etched by injecting H 2 into an epitaxial growth reacting furnace; and wherein the opening structures of the current modulation layer have a random and discrete distribution.
2. The nitride light emitting diode of claim 1 , wherein the current modulation layer is undoped In x Al y Ga 1-x-y N, wherein 0≦x≦0.1, 0≦y≦1, 0≦x+y≦1.
3. The nitride light emitting diode of claim 1 , wherein the opening structures of the current modulation layer is located at regions with relatively poor lattice quality in the nitride insulation material layer.
4. A nitride light emitting diode, comprising an N-type conductive layer, a P-type conductive layer, and a light-emitting layer between the N-type conductive layer and the P-type conductive layer; a current modulation layer in at least one of the N-type conductive layer or the P-type conductive layer and comprising a nitride insulation material layer with opening structures, wherein the opening structure is configured for current conduction and is etched by injecting H 2 into an epitaxial growth reacting furnace; and wherein a distribution density of the opening structures of the current modulation layer is 1×10 4 cm −2 -1×10 8 cm −2 .
5. The nitride light emitting diode of claim 1 , wherein a distance from a bottom surface of the current modulation layer and a bottom surface of the P-type conductive layer is 50 nm-200 nm.
6. The nitride light emitting diode of claim 1 , wherein the current modulation layer is about 50 nm-200 nm thick.
7. A light-emitting system comprising a plurality of nitride light-emitting diodes, each diode including an N-type conductive layer, a P-type conductive layer, and a light-emitting layer between the N-type conductive layer and the P-type conductive layer; a current modulation layer in at least one of the N-type conductive layer or the P-type conductive layer and comprising a nitride insulation material layer with opening structures, wherein the opening structure is configured for current conduction and is etched by injecting H 2 into an epitaxial growth reacting furnace; and wherein a distribution density of the opening structures of the current modulation layer is 1×10 4 cm −2 -1×10 8 cm −2 .
8. The system of claim 7 , wherein the current modulation layer is undoped In x Al y Ga 1-x-y N, wherein 0≦x≦0.1, 0≦y≦1, 0≦x+y≦1.
9. A light-emitting system comprising a plurality of nitride light-emitting diodes, each diode including an N-type conductive layer, a P-type conductive layer, and a light-emitting layer between the N-type conductive layer and the P-type conductive layer; a current modulation layer in at least one of the N-type conductive layer or the P-type conductive layer and comprising a nitride insulation material layer with opening structures, wherein the opening structure is configured for current conduction and is etched by injecting H 2 into an epitaxial growth reacting furnace; and
wherein the opening structures of the current modulation layer have a random and discrete distribution.
10. The system of claim 9 , wherein the opening structures of the current modulation layer are located at regions with relatively poor lattice quality in the nitride insulation material layer.
11. The system of claim 7 , wherein a distance from a bottom surface of the current modulation layer and a bottom surface of the P-type conductive layer is 50 nm-200 nm.
12. The system of claim 7 , wherein the current modulation layer is about 50 nm-200 nm thick.