Vapor deposition apparatus, deposition method, and method of manufacturing organic light-emitting display apparatus by using the same
Provided is a vapor deposition apparatus including: a plasma generator configured to change at least a portion of a first raw material gas into a radical form; a corresponding surface corresponding to the plasma generator; a reaction space between the plasma generator and the corresponding surface; and an insulating member separated from, and surrounding the plasma generator.
1. A method of forming a deposition layer on a substrate using a vapor deposition apparatus, the method comprising:
supplying a first raw material gas from a supply unit to a reaction space;
changing at least a portion of the first raw material gas into a radical form, by generating a plasma using a plasma generator in the reaction space; and
injecting a first raw depositing material onto the substrate, the first raw depositing material comprising a radical form,
wherein the changing of at least a portion of the first raw material gas into a radical form comprises substantially preventing electrons or ions, which are generated when the plasma is generated, from accelerating and colliding with the plasma generator using an insulating member separate from and surrounding the plasma generator, wherein the insulating member is separated from the plasma generator by an O-ring between the plasma generator and the insulating member.
2. The method of claim 1 , wherein the substrate and the vapor deposition apparatus are configured to move with respect to each other and execute a deposition process.
3. A method of manufacturing an organic light-emitting display apparatus by using a vapor deposition apparatus, wherein the organic light-emitting display apparatus comprises a first electrode, an intermediate layer which comprises an organic light-emitting layer, a second electrode, and an encapsulation layer,
wherein forming at least one thin film of the organic light-emitting display apparatus comprises:
positioning a substrate to correspond to the vapor deposition apparatus;
supplying a first raw material gas from a supply unit of the vapor deposition apparatus to a reaction space;
changing at least a portion of the first raw material gas into a radical form, by generating a plasma using a plasma generator in the reaction space; and
injecting a first raw depositing material into the substrate, the first raw depositing material comprising a radical form,
wherein the changing at least a portion of the first raw material gas into a radical form comprises substantially preventing electrons or ions, which are generated when the plasma is generated, from accelerating and colliding with the plasma generator using an insulating member separated from and surrounding the plasma generator, wherein the insulating member is separated from the plasma generator by an O-ring between the plasma generator and the insulating member.
4. The method of claim 3 , wherein the forming of the thin film of the organic light-emitting display comprises forming the encapsulation layer on the second electrode.
5. The method of claim 3 , wherein the forming of the thin film of the organic light-emitting display comprises forming an insulating layer.
6. The method of claim 3 , wherein the forming of the thin film of the organic light-emitting display comprises forming a conductive layer.