Semiconductor device and method of manufacturing the same
The present invention improves the aperture ratio of a pixel of a reflection-type display device or a reflection type display device without increasing the number of masks and without using a blackmask. A pixel electrode ( 167 ) is arranged so as to partially overlap a source wiring ( 137 ) for shielding the gap between pixels from light, and a thin film transistor is arranged so as to partially overlap a gate wiring ( 166 ) for shielding a channel region of the thin film transistor from light, thereby realizing a high pixel aperture ratio.
1. A display device comprising:
a source wiring, wherein the source wiring includes a first conductive layer formed over an insulating surface, wherein a bottom face of the first conductive layer directly contacts the insulating surface,
a transistor including a gate electrode and a semiconductor layer, wherein the gate electrode includes a second conductive layer formed over and in contact with the insulating surface;
an insulating film formed over the transistor, the first conductive layer and the second conductive layer,
a gate wiring formed over and in contact with the insulating film, wherein the gate wiring is connected with the gate electrode; and
a third conductive layer over and in contact with the insulating film, wherein one of a source region and a drain region of the transistor is electrically connected to the source wiring through the third conductive layer.
2. The display device according to claim 1 , wherein the display device is a liquid crystal device.
3. The display device according to claim 1 , wherein the gate electrode is located over the semiconductor layer.
4. The display device according to claim 1 , wherein the semiconductor layer comprises crystalline silicon.
5. The display device according to claim 1 , further comprising a pixel electrode over the insulating film, wherein the pixel electrode is electrically connected to the other of the source region and the drain region of the transistor.
6. The display device according to claim 1 , further comprising a red color filter overlapped with the semiconductor layer.
7. A display device comprising:
a source wiring, wherein the source wiring includes a first conductive layer formed over an insulating surface, wherein a bottom face of the first conductive layer contacts the insulating surface,
a transistor including a gate electrode and a semiconductor layer, wherein the gate electrode includes a second conductive layer formed over and in contact with the insulating surface;
an insulating film formed over the transistor, the first conductive layer and the second conductive layer,
a gate wiring formed over and in contact with the insulating film, wherein the gate wiring is connected with the gate electrode;
a third conductive layer over and in contact with the insulating film, wherein one of a source region and a drain region of the transistor is electrically connected to the source wiring through the third conductive layer; and
a capacitor wiring formed over and in contact with the insulating film, wherein the capacitor wiring extends in parallel with the gate wiring.
8. The display device according to claim 7 , wherein the display device is a liquid crystal device.
9. The display device according to claim 7 , wherein the gate electrode is located over the semiconductor layer.
10. The display device according to claim 7 , wherein the semiconductor layer comprises crystalline silicon.
11. The display device according to claim 7 , further comprising a pixel electrode over the insulating film, wherein the pixel electrode is electrically connected to the other of the source region and the drain region of the transistor.
12. The display device according to claim 7 , further comprising a red color filter overlapped with the semiconductor layer.
13. A display device comprising:
a source wiring, wherein the source wiring includes a first conductive layer,
a transistor including a gate electrode and a semiconductor layer, wherein the gate electrode includes a second conductive layer;
an insulating film formed over the first conductive layer and the second conductive layer, wherein the insulating film is in contact with an upper surface of the first conductive layer and an upper surface of the second conductive layer,
a gate wiring formed over the insulating film, wherein the gate wiring is connected with the gate electrode; and
a third conductive layer over the insulating film, wherein one of a source region and a drain region of the transistor is electrically connected to the first conductive layer through the third conductive layer.
14. The display device according to claim 13 , wherein the display device is a liquid crystal device.
15. The display device according to claim 13 , wherein the gate electrode is located over the semiconductor layer.
16. The display device according to claim 13 , wherein the semiconductor layer comprises crystalline silicon.
17. The display device according to claim 13 , further comprising a pixel electrode over the insulating film, wherein the pixel electrode is electrically connected to the other of the source region and the drain region of the transistor.
18. The display device according to claim 13 , wherein the gate wiring and the third conductive layer are formed by etching a same conductive layer.
19. The display device according to claim 13 , further comprising a capacitor wiring over the insulating film, wherein the capacitor wiring extends in parallel with the gate wiring.
20. The display device according to claim 17 , wherein the pixel electrode is in contact with the insulating film.
21. The display device according to claim 13 , further comprising a red color filter overlapped with the semiconductor layer.