Semiconductor laser device and manufacturing method thereof, and submount manufacturing method
A semiconductor laser device can include an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface. A conductive base can be provided on a side of the first surface of the single crystal SiC, and a semiconductor laser element can be provided on a side of the second surface of the single crystal SiC. An insulating member can be formed in the micropipes.
1. A semiconductor laser device, comprising:
an insulating single crystal SiC having a first surface, a second surface, and micropipes having openings in the first surface and the second surface;
a conductive base provided on a side of the first surface of the single crystal SiC;
a semiconductor laser element provided on a side of the second surface of the single crystal SiC; and
an insulating member disposed in the micropipes, wherein the insulating member is also disposed on the first surface and the second surface of the single crystal SiC in addition to inside the micropipes, and an amount of the insulating member that is disposed on the side of the second surface of the single crystal SiC is smaller than an amount of the insulating member that is disposed on the side of the first surface of the single crystal SiC.
2. The semiconductor laser device according to claim 1 , wherein gaps are provided in the micropipes.
3. A semiconductor laser device comprising:
an insulating single crystal SiC including a first surface, a second surface, and micropipes having openings in the first surface and the second surface;
a conductive base provided on the side of the first surface of the single crystal SiC;
a semiconductor laser element provided on the side of the second surface of the single crystal SiC;
a first conductive member comprising a first conductive bonding member provided on the first surface of the single crystal SiC; and
a second conductive member comprising a second conductive bonding member provided on the second surface of the single crystal SiC and that is insulated from the first conductive member,
wherein a part of at least one of the first conductive member and the second conductive member penetrates into the micropipes, and
wherein the micropipes are crystal defects in the single crystal SiC.
4. The semiconductor laser device according to claim 3 , wherein a distance between the first conductive member and the second conductive member is at least 15 μm.
5. The semiconductor laser device according to claim 3 , wherein the first surface and the second surface of the single crystal SiC are areas in which the insulating member is not disposed across the entire area.
6. The semiconductor laser device according to claim 3 , wherein the first conductive member and the second conductive member are insulated from each other so that an insulation breakdown voltage is 250 V or higher.
7. The semiconductor laser device according to claim 6 , wherein a distance between the first conductive member and the second conductive member is 15 μm or more.
8. The semiconductor laser device according to claim 6 , wherein a thickness of the single crystal SiC is at least 100 μm and no more than 400 μm.
9. The semiconductor laser device according to claim 6 , wherein a specific resistance of the single crystal SiC is at least 1×10 7 Ω·cm.