Semiconductor interconnect structure having a graphene-based barrier metal layer

1. An interconnect structure comprising:

at least one opening in a dielectric layer, the at least one opening including at least a bottom and one or more adjacent sidewalls;

a graphene-based barrier metal layer disposed directly on the at least one opening in the dielectric layer, wherein the graphene-based barrier metal layer is disposed directly on the one or more adjacent sidewalls of the dielectric layer and the graphene-based barrier metal layer is disposed directly on the bottom of the dielectric layer

a seed layer disposed on the graphene-based barrier metal layer;

an electroplated copper layer disposed on the seed layer;

a planarized surface, wherein a portion of the graphene-based barrier metal layer, the seed layer, and the electroplated copper layer are removed; and

a capping layer disposed on the planarized surface.

2. The interconnect structure of claim 1 , wherein the at least one opening further comprises a trench area, a trench area with at least one via hole, or a combination thereof.

3. The interconnect structure of claim 1 , wherein:

the graphene-based barrier metal layer is formed utilizing electrostatic deposition at a temperature ranging from about 15° C. to about 25° C.;

the graphene-based barrier metal layer comprises a single atomic layer of sp 2 -bonded carbon atoms densely packed into a hexagonal crystal lattice; and

the graphene-based barrier metal layer has a thickness of about 0.15 nm.

4. The interconnect structure of claim 1 , wherein:

the graphene-based barrier metal layer is formed utilizing electrostatic deposition at a temperature ranging from about 15° C. to about 25° C.;

the graphene-based barrier metal layer is multi-layered and comprises more than one single atomic layer of sp 2 -bonded carbon atoms densely packed into a hexagonal crystal lattice; and

the graphene-based barrier metal layer has a thickness ranging from about 0.3 nm to about 0.9 nm.

5. The interconnect structure of claim 1 , wherein:

the graphene-based barrier metal layer is formed utilizing chemical vapor deposition (CVD) at a temperature ranging from about 25° C. to about 400° C.;

the graphene-based barrier metal layer is a metal alloy comprising tantalum and graphene, or tantalum nitride and graphene; and

the graphene-based barrier metal layer has a thickness ranging from about 0.15 nm to about 0.9 nm.

6. The interconnect structure of claim 1 , wherein:

the seed layer is formed utilizing physical vapor deposition (PVD) or chemical vapor deposition (CVD); and

the seed layer comprises pure copper.

7. The interconnect structure of claim 1 , wherein:

the seed layer is formed utilizing physical vapor deposition (PVD) or chemical vapor deposition (CVD);

the seed layer comprises a copper alloy having impurities; and

the impurities include manganese, aluminum, tin, or a combination thereof.

8. The interconnect structure of claim 1 , wherein the electroplated copper layer is annealed at a temperature ranging from about 50° C. to about 350° C. to enhance grain growth of copper within the interconnect structure.

9. The interconnect structure of claim 8 , wherein:

the temperature is high enough to enhance diffusion of impurities within the interconnect structure; and

the impurities include manganese, aluminum, tin, or a combination thereof.

10. The interconnect structure of claim 1 , wherein:

the capping layer is formed utilizing chemical vapor deposition (CVD) and at a temperature ranging from about 350° C. to about 400° C.; and

the capping layer is a dielectric capping layer.