Semiconductor device and fabricating method thereof
A semiconductor device includes an interlayer insulating film formed on a substrate and including a trench, a gate insulating film formed in the trench, a work function adjusting film formed on the gate insulating film in the trench along sidewalls and a bottom surface of the trench, and including an inclined surface having an acute angle with respect to the sidewalls of the trench, and a metal gate pattern formed on the work function adjusting film in the trench to fill up the trench.
1. A semiconductor device comprising:
a substrate including a first surface;
an interlayer insulating film disposed on the first surface of the substrate and including a trench;
a gate insulating film disposed in the trench;
a first work function adjusting film disposed in the trench, and disposed on or above the gate insulating film;
a second work function adjusting film disposed in the trench, and disposed on the first work function adjusting film; and
a metal gate pattern disposed on or above the second work function adjusting film, and filling the trench,
wherein the first work function adjusting film includes a first portion extending along a first sidewall of the trench, a second portion extending along a second sidewall of the trench and a third portion extending along a bottom surface of the trench,
the first portion of the first work function adjusting film includes a top surface that is inclined with respect to the first surface of the substrate, and
an uppermost point of the second work function adjusting film is below an uppermost point of the first work function adjusting film.
2. The semiconductor device of claim 1 , wherein the gate insulating film is formed along the first sidewall, the second sidewall and the bottom surface of the trench.
3. The semiconductor device of claim 1 , wherein the first portion of the first work function adjusting film includes a first sidewall and a second sidewall, the second sidewall of the first work function adjusting film contacting the second work function adjusting film,
the top surface of the first work function adjusting film is inclined downwardly from a top of the first sidewall to a top of the second sidewall, and
the top surface of the first work function adjusting film forms an acute angle with respect to the first sidewall of the first work function adjusting film.
4. The semiconductor device of claim 1 , wherein the second work function adjusting film includes a first portion extending along the first portion of the first work function adjusting film, a second portion extending along the second portion of the first work function adjusting film and a third portion extending along the third portion of the first work function adjusting film, and
the first portion of the second work function adjusting film includes a top surface that is inclined with respect to the first surface of the substrate.
5. The semiconductor device of claim 4 , wherein the first portion of-the second work function adjusting film includes a first sidewall and a second sidewall, the first sidewall of the second work function adjusting film contacting the first work function adjusting film,
the top surface of the second work function adjusting film is inclined downwardly from a top of the first sidewall to a top of the second sidewall, and
the top surface of the second work function adjusting film forms an acute angle with respect to the first sidewall of the second work function adjusting film.
6. The semiconductor device of claim 4 , wherein the top surface of the first portion of the first work function adjusting film and the top surface of the first portion of the second work function adjusting film are co-planar.
7. The semiconductor device of claim 1 , wherein the gate insulating film includes a first portion disposed on the first sidewall of the trench, a second portion disposed on the second sidewall of the trench, and a third portion disposed on the bottom surface of the trench.
8. The semiconductor device of claim 1 , further comprising an etch stop film disposed along the bottom surface, the first sidewall and the second sidewall of the trench.
9. The semiconductor device of claim 8 , wherein the etch stop film is disposed on the gate insulating film, and first work function adjusting film is disposed on the etch stop film.
10. The semiconductor device of claim 1 , wherein a width of the first portion of the first work function adjusting film decreases as a distance from the bottom surface of the trench increases.
11. The semiconductor device of claim 1 , further comprising-an-adhesive film disposed on the second work function adjusting film.
12. The semiconductor device of claim 11 , wherein the adhesive film is also disposed on the top surface of the first portion of the first work function adjusting film and on a top surface of the second portion of the first work function adjusting film.
13. A semiconductor device comprising:
a substrate including a first surface;
an interlayer insulating film disposed on the first surface of the substrate, and including a first trench and a second trench which are separated from each other;
an NMOS transistor including a first metal gate formed in the first trench; and
a PMOS transistor including a second metal gate formed in the second trench, wherein the first metal gate includes a first N-type work function adjusting film formed along a first sidewall, a second sidewall and a bottom surface of the first trench, the second metal gate includes a P-type work function adjusting film and a second N-type work function adjusting film which are stacked along a first sidewall, a second sidewall and a bottom surface of the second trench,
the second N-type work function adjusting film includes a first portion extending along the first sidewall of the second trench, a second portion extending along the second sidewall of the second trench and a third portion extending along the bottom surface of the second trench,
the first portion of the second N-type work function adjusting film includes a top surface that farms an acute angle with respect to a first sidewall of the first portion of the second N-type work function adjusting film, the first sidewall of the first portion of the second N-type work function adjusting film contacting the P-type work function adjusting film, the top surface of the first portion of the second N-type work function adjusting film being inclined with respect to the bottom surface of the second trench, and
an uppermost point of the second N-type work function adjusting film is below an uppermost point of the P-type work function adjusting film.
14. The semiconductor device of claim 13 , wherein the second metal gate includes an etch stop film on which the P-type work function adjusting film is formed.
15. A semiconductor device comprising:
a substrate;
an interlayer insulating film disposed on the substrate and including a trench;
a gate insulating film formed in the trench;
a first TiN film formed on the gate insulating film;
a TaN film formed on the first TiN film;
a second TiN film formed on the TaN film; and
a TiAl film formed on the second TiN film,
wherein at least one of the second TiN film and the TiAl film includes a first portion extending along a first sidewall of the trench, a second portion extending along a second sidewall of the trench and a third portion extending along a bottom surface of the trench, and
the first portion includes a top surface that is inclined with respect to the bottom surface of the trench.
16. The semiconductor device of claim 15 , wherein the top surface of the first portion forms an acute angle with respect to a sidewall of the first portion.
17. A semiconductor device, comprising:
a substrate;
an interlayer insulating film disposed on the substrate and including a trench;
a gate insulating film disposed on a first sidewall, a second sidewall and a bottom surface of the trench;
a first work function adjusting film disposed on or above the gate insulating film, the first work function adjusting film having a first sidewall, a second sidewall and a bottom surface;
a second work function adjusting film disposed between the first work function adjusting film and the gate insulating film;
a metal gate pattern disposed on or above the first work function adjusting film,
wherein a top surface of the first sidewall of the first work function adjusting film and a top surface of the second sidewall of the first work function adjusting film are chamfered,
at least one of the top surface of the first sidewall of the first work function adjusting film and the top surface of the second sidewall of the first work function adjusting film is below a top surface of the metal gate pattern, and
an uppermost point of the second work function adjusting film is below an uppermost point of the first work function adjusting film.
18. The semiconductor device of claim 17 , further comprising an etch stop film disposed between the gate insulating film and the first work function adjusting film; and
an adhesive film disposed between the first work function adjusting film and the metal gate pattern.
19. The semiconductor device of claim 17 , wherein the second work adjusting film has a first sidewall, a second sidewall and a bottom surface, and
each of an upper portion of the first sidewall of the second work function adjusting film and an upper portion of the second sidewall of the second work function adjusting film is chamfered.