Image sensor device with light blocking structure
The disclosure provides an image sensor device and a manufacturing method. The image sensor device includes a semiconductor substrate and a light sensing region in the semiconductor substrate. The image sensor device also includes a light blocking structure in the semiconductor substrate and adjacent to the light sensing region. A sidewall of the light blocking structure is a curved surface.
1. An image sensor device, comprising:
a semiconductor substrate;
a light sensing region in the semiconductor substrate; and
a light blocking structure in the semiconductor substrate and adjacent to the light sensing region, wherein a sidewall of the light blocking structure in a cross-sectional view of the image sensor is a curved surface, wherein the cross-sectional view of the image sensor is taken along an imaginary plane parallel to a normal direction of a top surface of the semiconductor substrate.
2. The image sensor device as claimed in claim 1 , wherein the light blocking structure comprises a reflective material.
3. The image sensor device as claimed in claim 1 , wherein the light blocking structure comprises a metal material.
4. The image sensor device as claimed in claim 1 , further comprising an isolation region in the semiconductor substrate and surrounding the light blocking structure, wherein the isolation region is a doped region.
5. The image sensor device as claimed in claim 1 , wherein the light blocking structure extends from a first surface towards a second surface of the semiconductor substrate.
6. The image sensor device as claimed in claim 5 , further comprising an isolation structure in the semiconductor substrate and extending from the second surface towards the first surface of the semiconductor substrate.
7. The image sensor device as claimed in claim 5 , wherein the light blocking structure has a width at the same level as the first surface and a height, and a ratio of the width to the height is in a range from about 0.3 to about 0.7.
8. The image sensor device as claimed in claim 5 , wherein widths of the light blocking structure gradually increase along a direction from the first surface towards a middle region of the light blocking structure.
9. The image sensor device as claimed in claim 8 , wherein widths of the light blocking structure gradually decrease along a direction from the middle region towards the bottom of the light blocking structure.
10. The image sensor device as claimed in claim 1 , wherein the light blocking structure has a substantially planar bottom surface.
11. An image sensor device, comprising:
a semiconductor substrate;
a first light sensing region and a second light sensing region in the semiconductor substrate; and
a light blocking structure in the semiconductor substrate and between the first light sensing region and the second light sensing region, wherein opposite sidewalls of the light blocking structure in a cross-sectional view of the image sensor are curved surfaces, wherein the cross-sectional view of the image sensor is taken along an imaginary plane parallel to a normal direction of a top surface of the semiconductor substrate.
12. The image sensor device as claimed in claim 11 , wherein the light blocking structure comprises a metal material.
13. The image sensor device as claimed in claim 11 , further comprising an isolation region in the semiconductor substrate and between the first light sensing region and the second light sensing region, wherein the isolation region surrounds the light blocking structure.
14. The image sensor device as claimed in claim 11 , wherein the opposite sidewalls of the light blocking structure in the cross-sectional view of the image sensor are substantially symmetrical to each other with respect to a center of the light blocking structure.
15. The image sensor device as claimed in claim 11 , further comprising a light guiding structure over the semiconductor substrate.
16. An image sensor device, comprising:
a semiconductor substrate;
a first light sensing region and a second light sensing region in the semiconductor substrate;
a light blocking structure in the semiconductor substrate and between the first light sensing region and the second light sensing region, wherein opposite sidewalls of the light blocking structure are curved surfaces; and
a light guiding structure over the semiconductor substrate,
wherein the light guiding structure comprises a reflective structure, and the light blocking structure and the reflective structure are substantially aligned with each other.
17. The image sensor device as claimed in claim 11 , wherein the light blocking structure extends from a first surface towards a second surface of the semiconductor substrate.
18. The image sensor device as claimed in claim 17 , further comprising an isolation structure in the semiconductor substrate and extending from the second surface towards the first surface of the semiconductor substrate.
19. The image sensor device as claimed in claim 18 , wherein the light blocking structure and the isolation structure are substantially aligned with each other.
20. The image sensor device as claimed in claim 18 , wherein the light blocking structure and the isolation structure are separated from each other.