Organic light emitting diode display device and method of fabricating the same

1. An OLED display device, comprising:

a substrate;

a driving thin film transistor (TFT) formed on the substrate;

a passivation layer formed over the substrate and covering the driving TFT;

an OLED display formed on the passivation layer, the OLED including a first electrode, an organic emitting layer and a second electrode;

a base line formed on the passivation layer;

a support pattern formed on the central portion of the base line;

a first bank layer covering a boundary portion of each of the first electrode and the base line so as to expose a central portion of each of the first electrode and the base line; and

a second bank layer formed on a top surface of the support pattern,

wherein

the organic emitting layer is formed on the first electrode, the first and second bank layers and the support pattern in a pixel region of the substrate, and is cut at a top edge portion of the support pattern to expose a portion of the base line,

the second electrode covers the organic emitting layer and is connected to the portion of the base line, and

the second bank layer has a same material as the first bank layer.

2. The OLED display device according to claim 1 , wherein a width of the second bank layer is smaller than a width of the support pattern along a first direction that is a horizontal direction of the substrate, whereas a width of the second bank layer is greater than a width of the support pattern along a second direction that is perpendicular to the first direction.

3. The OLED display device according to claim 1 , wherein a width of the second bank layer is greater than a width of the support pattern along a first direction that is a horizontal direction of the substrate, whereas a width of the second bank layer is smaller than a width of the support pattern along a second direction that is perpendicular to the first direction.

4. The OLED display device according to claim 1 , wherein the second bank layer has a width greater than the support pattern to cover entirely the support pattern.

5. The OLED display device according to claim 1 , wherein the support pattern includes an inorganic insulating material.

6. The OLED display device according to claim 1 , wherein the support pattern is positioned to overlap with the driving thin film transistor (TFT).

7. The OLED display device according to claim 1 , wherein the second bank layer is disposed in direct contact with the top surface of the support pattern.

8. A method of fabricating an OLED display device, comprising:

forming a driving thin film transistor (TFT) on a substrate;

forming a passivation layer over the substrate and covering the driving TFT;

forming an OLED display on the passivation layer, the OLED including a first electrode, an organic emitting layer and a second electrode;

forming a base line on the passivation layer;

forming a support pattern on the central portion of the base line;

forming a first bank layer to cover a boundary portion of each of the first electrode and the base line so as to expose a central portion of each of the first electrode and the base line; and

forming a second bank layer on a top surface of the support pattern,

wherein

the organic emitting layer is formed on the first electrode, the first and second bank layers and the support pattern in a pixel region of the substrate, and is cut at a top edge portion of the separator to expose a portion of the base line,

the second electrode covers the organic emitting layer and is connected to the portion of the base line, and

the second bank layer has a same material as the first bank layer.

9. The method according to claim 8 , wherein a width of the second bank layer is smaller than a width of the support pattern along a first direction that is a horizontal direction of the substrate, whereas a width of the second bank layer is greater than a width of the support pattern along a second direction that is perpendicular to the first direction.

10. The method according to claim 8 , wherein a width of the second bank layer is greater than a width of the support pattern along a first direction that is a horizontal direction of the substrate, whereas a width of the second bank layer is smaller than a width of the support pattern along a second direction that is perpendicular to the first direction.

11. The method according to claim 8 , wherein the second bank layer has a width greater than the support pattern to cover entirely the support pattern.

12. The method according to claim 8 , wherein the support pattern includes an inorganic insulating material.

13. The method according to claim 8 , wherein forming the support pattern and forming the first and second bank layers comprises:

forming a sacrificing pattern on the base line;

forming the first bank layer on the first electrode and the base line and forming the second bank layer on the sacrificing pattern; and

forming the support pattern by etching the sacrificing pattern such that a width of the support pattern is smaller than a width of the second bank layer.

14. The method according to claim 8 , wherein the support pattern is positioned to overlap with the driving thin film transistor (TFT).

15. The method according to claim 8 , wherein the second bank layer is disposed in direct contact with the top surface of the support pattern.