IP Library Granted Patent US 9,324,938
Granted Patent B2
US 9,324,938 · App. 14/098,759 · Granted Apr 26, 2016

Boron carbide films exhibits extraordinary magnetoconductance and devices based thereon

Inventors: Jeffry Kelber (Denton, TX); Peter Dowben (Lincoln, NE)
Assignee: UNIVERSITY OF NORTH TEXAS
H01L43/10H01L43/08
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Quick Facts
Patent No.
US 9,324,938
App. No.
14/098,759
Granted
Apr 26, 2016
Kind
B2
Abstract

Boron carbide polymers prepared from orthocarborane icosahedra cross-linked with a moiety A wherein A is selected from the group consisting of benzene, pyridine. 1,4-diaminobenzene and mixtures thereof give positive magnetoresistance effects of 30%-80% at room temperature. The novel polymers may be doped with transitional metals to improve electronic and spin performance. These polymers may be deposited by any of a variety of techniques, and may be used in a wide variety of devices including magnetic tunnel junctions, spin-memristors and non-local spin valves.

Claims (9)

1. A composition of matter comprised of a boron carbide polymer which polymer is comprised of orthocarborane icosahedra cross-linked with a moiety A;

wherein A is selected from the group consisting of benzene, pyridine, 1,4-diaminobenzene and mixtures thereof; and

wherein said polymer exhibits a positive magnetoresistance effect of about 30%-80% at room temperature.

2. The composition of matter of claim 1 , wherein said polymer is doped with a transition metal at apex carbon sites in said polymer.

3. The composition of matter of claim 1 , wherein said polymer is deposited as an amorphous film on a substrate by plasma vapor deposition, chemical vapor deposition, plasma enhanced chemical vapor deposition or by co-condensation of orthocarborane and a moiety A;

wherein A is selected from the group consisting of benzene, pyridine and 1,4-diaminobenzene.

4. A magnetic tunnel junction comprising a barrier layer which is comprised of the composition of matter of claim 1 which barrier layer may be switched between a polarized and non-polarized state under an applied voltage.

5. A spin-memristor comprising a barrier material comprised of the composition of matter of claim 1 , wherein said barrier material exhibits a change in conductivity in response to a pulsed applied magnetic field, whereby said spin-memristor switches between states of low and high resistance.

6. A non-local spin valve comprising a channel of the composition of matter of claim 1 .

Assignments (2)
CONFIRMATORY LICENSE Recorded Jun 9, 2014
From: UNIVERSITY OF NORTH TEXAS
To: DEFENSE THREAT REDUCTION AGENCY; DEPT. OF DEFENSE; UNITED STATES GOVERNMENT
Reel/Frame 033106/0669 →
CONFIRMATORY LICENSE Recorded Apr 17, 2014
From: UNIVERSITY OF NORTH TEXAS
To: DEFENSE THREAT REDUCTION AGENCY; DEPT. OF DEFENSE; UNITED STATES GOVERNMENT
Reel/Frame 032712/0580 →
Continuity (2)
Provisional Application 61737907 · Dec 17, 2012
Related Publication 20140203382A1 · Jul 24, 2014