IP Library Granted Patent US 9,330,588
Granted Patent B2
US 9,330,588 · App. 13/557,780 · Granted May 3, 2016

Electro-optical device, driving method of electro-optical device, and electronic apparatus

Inventor: Toshiyuki Kasai (Okaya, JP)
Assignee: SEIKO EPSON CORPORATION
G09G3/003G09G3/3233G09G2300/0842G09G2320/0214
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Quick Facts
Patent No.
US 9,330,588
App. No.
13/557,780
Granted
May 3, 2016
Kind
B2
Abstract

A pixel circuit includes a driving transistor, a switching transistor, and a light emitting element, and the light emitting elements are formed on a semiconductor substrate. A first substrate potential is supplied to the switching transistor, and a second substrate potential, different from the first substrate potential, is supplied to the driving transistor.

Claims (33)

1. An electro-optical device in which a scan line, a data line, and a pixel circuit are formed on a semiconductor substrate,

wherein the pixel circuit includes

a light emitting element having a first electrode and a second electrode,

a driving transistor that controls a current in accordance with a potential of a gate node while being electrically connected to the first electrode of the light emitting element during a period when the current is supplied to the light emitting element, and

a switching transistor that is an N-channel transistor and is electrically connected between the gate node of the driving transistor and the data line,

wherein a first substrate potential is supplied to the switching transistor and is lower than a minimum value of a source potential of the switching transistor, and

wherein a second substrate potential, different from the first substrate potential, is supplied to the driving transistor.

2. An electro-optical device in which a scan line, a data line, and a pixel circuit are formed on a semiconductor substrate,

wherein the pixel circuit includes

a light emitting element having a first electrode and a second electrode,

an N-channel driving transistor that controls a current in accordance with a potential of a gate node while being electrically connected to the first electrode of the light emitting element during a period when the current is supplied to the light emitting element, and

an N-channel switching transistor that is an N-channel transistor and is electrically connected between the gate node of the driving transistor and the data line,

wherein a first substrate potential is supplied to the switching transistor and is lower than a minimum value of a source potential of the switching transistor,

wherein a second substrate potential different from the first substrate potential is supplied to the driving transistor, and

wherein the first substrate potential is lower than the second substrate potential.

3. The electro-optical device according to claim 2 , wherein the light emitting element and the driving transistor are connected in series between a first potential and a second potential, and the second substrate potential is a common potential with a source node of the driving transistor.

4. The electro-optical device according to claim 1 , wherein the pixel circuit further includes a power supply line for supplying a first potential, wherein one of a source node and a drain node of the driving transistor is connected to the first electrode of the light emitting element, wherein the other of the source node and the drain node of the driving transistor is connected to the power supply line, and

wherein the second substrate potential common with the first potential is supplied to the driving transistor.

5. The electro-optical device according to claim 1 , wherein the driving transistor is obtained by connecting, in series, at least two transistors to which a gate is connected in common, and

wherein the second substrate potential is supplied to the at least two transistors.

6. The electro-optical device according to claim 1 , wherein one of a source node and a drain node of the switching transistor is connected to the data line, and

wherein the gate node of the switching transistor is connected to the scan line.

7. The electro-optical device according to claim 1 , wherein the pixel circuit further includes a capacitive element, and

wherein one of a source node and a drain node of the switching transistor is connected to an end of the capacitive element and the gate node of the driving transistor.

8. The electro-optical device according to claim 7 , wherein the current flowing in the light emitting element is a current according to a voltage held by the capacitive element.

9. The electro-optical device according to claim 1 , wherein the current flowing in the light emitting element is a current according to a voltage between a gate and a source of the driving transistor.

10. The electro-optical device according to claim 1 , wherein the switching transistor electrically connects the gate node of the driving transistor and the data line when the scan line is selected, and

wherein a scan line driving circuit for driving the scan line and a data line driving circuit for driving the data line are formed on the semiconductor substrate together with the pixel circuit.

11. The electro-optical device according to claim 10 , wherein a separation well is formed between a display unit in which the pixel circuit is provided and a peripheral circuit in which the scan line driving circuit and the data line driving circuit are provided.

12. A driving method of an electro-optical device in which a scan line, a data line, and a pixel circuit are formed on a semiconductor substrate, wherein the pixel circuit includes a light emitting element having a first electrode and a second electrode, a driving transistor that controls a current flowing in the light emitting element while being connected to the first electrode of the light emitting element, and a switching transistor that is an N-channel transistor and is connected between the gate node of the driving transistor and the data line, the method comprising:

supplying a first substrate potential as a substrate potential of the switching transistor so that the first substrate potential is lower than a minimum value of a source potential of the switching transistor; and

supplying a second substrate potential different from the first substrate potential, as a substrate potential of the driving transistor.

13. An electronic apparatus including the electro-optical device according to claim 1 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 15, 2025
From: SEIKO EPSON CORPORATION
To: LUMITEK DISPLAY TECHNOLOGY LIMITED
Reel/Frame 071705/0176 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 25, 2012
From: KASAI, TOSHIYUKI
To: SEIKO EPSON CORPORATION
Reel/Frame 028640/0935 →
Priority Claims (2)
JP 2011-166576 · Jul 29, 2011 · national
JP 2012-104847 · May 1, 2012 · national
Continuity (1)
Related Publication 20130026929A1 · Jan 31, 2013