Optoelectronic device and method for manufacturing same
An optoelectronic device comprises a substrate; pads on a surface of the substrate; semiconductor elements, each element resting on a pad; a portion covering at least the lateral sides of each pad, the portion preventing the growth of the semiconductor elements on the lateral sides; and a dielectric region extending in the substrate from the surface and connecting, for each pair of pads, one of the pads in the pair to the other pad in the pair. A method of manufacturing an optoelectronic device is also disclosed.
1. A method of manufacturing an optoelectronic device comprising the successive steps of:
providing a substrate;
depositing a layer on the substrate;
forming insulating blocks on the layer;
etching portions of the layer, which are not covered with the insulating blocks to form pads on a surface of the substrate;
forming a portion of the optoelectronic device, covering at least the lateral sides of each pad defining a dielectric region by oxidation or nitriding of the lateral sides of the pads and the substrate portions which are not covered with the pads;
removing the insulating blocks; and
forming semiconductor elements, each element resting on a pad, said dielectric portion comprising a material preventing the growth of the semiconductor elements on the lateral sides.
2. A method of manufacturing an optoelectronic device comprising the successive steps of:
providing a substrate;
depositing a layer on the substrate;
forming insulating blocks on the layer;
etching portions of the layer which are not covered with the insulating blocks to form pads on a surface of the substrate;
removing the insulating blocks;
forming a portion of the optoelectronic device, covering at least the lateral sides of each pad defining a dielectric region by:
depositing a dielectric layer covering the pads and the substrate between the pads;
anisotropically etching the dielectric layer to remove the dielectric layer from the substrate and from the top of the pads and leave portions of the dielectric layer on the lateral sides; and
nitriding the substrate portions which are not covered with the pads; and
forming semiconductor elements, each element resting on a pad, said dielectric portion comprising a material preventing the growth of the semiconductor elements on the lateral sides.
3. The method of claim 2 , further comprising nitriding the tops of the pads.