IP Library › Granted Patent US 9,333,750
Granted Patent B2
US 9,333,750 · App. 14/256,743 · Granted May 10, 2016

Method of processing substrate

Inventor: Masataka Kato (Hiratsuka, JP)
Assignee: Canon Kabushiki Kaisha
B41J2/1603B41J2/1628B41J2/1629B41J2/1631B41J2/1635B41J2/1645
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Quick Facts
Patent No.
US 9,333,750
App. No.
14/256,743
Granted
May 10, 2016
Kind
B2
Abstract

A method of processing a substrate includes forming holes in bottom portions of a plurality of recesses formed in a substrate to be arranged in an array direction at a predetermined pitch by performing reactive ion etching on the bottom portions of the plurality of recesses. The forming holes in the bottom portions of the plurality of recesses is a process of preparing a substrate in which a dummy recess serving as a dummy is formed on at least one side of the array direction, in which the plurality of recesses that include the bottom portions in which the holes are formed are arranged, such that a recess is formed on both sides of a recess so that the plurality of recesses are formed at the predetermined pitch in the array direction and performing reactive ion etching on the bottom portions of the plurality of recesses of the prepared substrate.

Claims (43)

1. A method for preventing tilt while forming holes in a substrate comprising:

forming a hole in a bottom portion of each of a plurality of recesses that are formed in a substrate to be arranged in an array direction and spaced apart from each other by a predetermined distance by performing reactive ion etching on the bottom portion of each of the plurality of recesses, and

controlling a width of a sheath formed along a surface of the substrate while performing the reactive ion etching by forming at least one dummy recess proximate one of the plurality of recesses,

wherein the at least one dummy recess is formed on at least one side of the array direction in which the plurality of recesses are formed.

2. The method of processing a substrate according to claim 1 ,

wherein, the dummy recess is formed outside a recess that is located at an end among the plurality of recesses, each of which includes the bottom portion in which the hole is formed and which are arranged in the array direction.

3. The method of processing a substrate according to claim 1 ,

wherein the dummy recess is formed in such a manner as to surround the plurality of recesses, each of which includes the bottom portion in which the hole is formed and which are arranged in the array direction.

4. The method of processing a substrate according to claim 1 ,

wherein the substrate is cut at a position between the plurality of recesses, each of which includes the bottom portion in which the hole is formed and which are formed in the process of forming the hole in the bottom portion of each of the plurality of recesses, and the dummy recess.

5. The method of processing a substrate according to claim 1 ,

wherein the substrate is a silicon substrate made of silicon.

6. The method of processing a substrate according to claim 1 ,

wherein the plurality of recesses are formed by wet etching.

7. The method of processing a substrate according to claim 1 ,

wherein the holes are holes that extend through the substrate from the bottom portions of the plurality of recesses.

8. The method of processing a substrate according to claim 1 ,

wherein a bottom portion of the dummy recess does not have a hole formed in the bottom portion.

9. A method of manufacturing a liquid discharge head comprising:

forming a hole in a bottom portion of each of a plurality of recesses that are formed in a substrate in such a manner as to be arranged in an array direction and spaced apart from each other by a predetermined distance by performing reactive ion etching on the bottom portion of each of the plurality of recesses; and

cutting the substrate at a position between the plurality of recesses, each of which includes the bottom portion in which the hole is formed and which are formed in the process of forming the hole in the bottom portion of each of the plurality of recesses, and a dummy recess,

wherein the process of forming the hole in the bottom portion of each of the plurality of recesses is a process of preparing a substrate in which the dummy recess that serves as a dummy is formed on at least one side of the array direction in which the plurality of recesses, each of which includes the bottom portion in which the hole is formed, are arranged in such a manner that a recess is formed on both sides of a recess so that the plurality of recesses are spaced apart from one another by the predetermined distance in the array direction in which the plurality of recesses, each of which includes the bottom portion in which the hole is formed, are arranged and performing reactive ion etching on the bottom portion of each of the plurality of recesses of the substrate, which is prepared, and

wherein a portion of the substrate in which the dummy recess is formed is not used as a substrate of a liquid discharge head, and a portion of the substrate in which the plurality of recesses, each of which includes the bottom portion in which the hole is formed, are formed is used as a substrate of a liquid discharge head.

10. The method of manufacturing a liquid discharge head according to claim 9 ,

wherein, the dummy recess is formed outside a recess that is located at an end among the plurality of recesses, each of which includes the bottom portion in which the hole is formed and which are arranged in the array direction.

11. The method of manufacturing a liquid discharge head according to claim 9 ,

wherein the dummy recess is formed in such a manner as to surround the plurality of recesses, each of which includes the bottom portion in which the hole is formed and which are arranged in the array direction.

12. The method of manufacturing a liquid discharge head according to claim 9 ,

wherein the substrate is a silicon substrate made of silicon.

13. The method of manufacturing a liquid discharge head according to claim 9 ,

wherein the plurality of recesses are formed by wet etching.

14. The method of manufacturing a liquid discharge head according to claim 9 ,

wherein the holes are holes that extend through the substrate from the bottom portions of the plurality of recesses.

15. The method of manufacturing a liquid discharge head according to claim 9 ,

wherein a bottom portion of the dummy recess does not have a hole formed in the bottom portion.

16. A method of processing a substrate comprising:

forming a hole in a bottom portion of each of a plurality of recesses that are formed in a substrate to be arranged in an array direction and spaced apart from each other by a predetermined distance by performing reactive ion etching on the bottom portion of each of the plurality of recesses,

wherein the forming the hole in the bottom portion of each of the plurality of recesses is a process of preparing a substrate in which a dummy recess that serves as a dummy is formed on at least one side of the array direction in which the plurality of recesses, each of which includes the bottom portion in which the hole is formed, are arranged in such a manner that a recess is formed on both sides of a recess so that the plurality of recesses are spaced apart from one another by the predetermined distance in the array direction in which the plurality of recesses, each of which includes the bottom portion in which the hole is formed, are arranged and performing reactive ion etching on the bottom portion of each of the plurality of recesses of the substrate, which is prepared,

wherein the dummy recess is formed in such a manner as to surround the plurality of recesses, each of which includes the bottom portion in which the hole is formed and which are arranged in the array direction.

17. A method of processing a substrate comprising:

forming a hole in a bottom portion of each of a plurality of recesses that are formed in a substrate to be arranged in an array direction and spaced apart from each other by a predetermined distance by performing reactive ion etching on the bottom portion of each of the plurality of recesses,

wherein the forming the hole in the bottom portion of each of the plurality of recesses is a process of preparing a substrate in which a dummy recess that serves as a dummy is formed on at least one side of the array direction in which the plurality of recesses, each of which includes the bottom portion in which the hole is formed, are arranged in such a manner that a recess is formed on both sides of a recess so that the plurality of recesses are spaced apart from one another by the predetermined distance in the array direction in which the plurality of recesses, each of which includes the bottom portion in which the hole is formed, are arranged and performing reactive ion etching on the bottom portion of each of the plurality of recesses of the substrate, which is prepared,

wherein the substrate is cut at a position between the plurality of recesses, each of which includes the bottom portion in which the hole is formed and which are formed in the process of forming the hole in the bottom portion of each of the plurality of recesses, and the dummy recess.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 28, 2014
From: KATO, MASATAKA
To: CANON KABUSHIKI KAISHA
Reel/Frame 033420/0001 →
Priority Claims (1)
JP 2013-090807 · Apr 23, 2013 · national
Continuity (1)
Related Publication 20140315335A1 · Oct 23, 2014