Semiconductor device including a semiconductor sheet unit interconnecting a source and a drain
A semiconductor device includes a substrate, a first source/drain (S/D), a second S/D, and a semiconductor sheet unit. The substrate extends in a substantially horizontal direction. The first S/D is formed on the substrate. The second S/D is disposed above the first S/D. The semiconductor sheet unit extends in a substantially vertical direction and interconnects the first S/D and the second S/D. A method for fabricating the semiconductor device is also disclosed.
1. A semiconductor device comprising:
a substrate extending in a substantially horizontal direction;
a source unit including a plurality of sources;
a drain unit including a plurality of drains, wherein one of the source unit and the drain unit is formed on the substrate;
a semiconductor sheet unit extending in a substantially vertical direction and interconnecting the source unit and the drain unit; and
a nanowire unit extending in the substantially vertical direction, interconnecting the source unit and the drain unit, and having a cross-sectional shape of a dot in a top view.
2. The semiconductor device of claim 1 , wherein the semiconductor sheet unit has a straight line cross-sectional shape in the top view.
3. The semiconductor device of claim 1 , wherein the semiconductor sheet unit has a cross-sectional shape other than a straight line in the top view.
4. The semiconductor device of claim 1 , wherein the semiconductor sheet unit includes a plurality of semiconductor sheets that cooperatively define a cross-sectional shape unit in the top view.
5. The semiconductor device of claim 4 , wherein the cross-sectional shape unit includes a plurality of cross sections that have the same shape.
6. The semiconductor device of claim 5 , wherein the cross sections have the same size.
7. The semiconductor sheet unit of claim 5 , wherein the cross sections have different sizes.
8. The semiconductor device of claim 4 , wherein the cross-sectional shape unit includes a plurality of cross sections that have different shapes.
9. The semiconductor device of claim 1 , further comprising a gate surrounding the semiconductor sheet unit.
10. A method for fabricating a semiconductor device, comprising:
providing a substrate that extends in a substantially horizontal direction;
forming one of a source unit and a drain unit on the substrate;
forming a semiconductor sheet unit that extends in a substantially vertical direction and that interconnects the source unit and the drain unit; and
forming a nanowire unit that extends in the substantially vertical direction, that interconnects the source unit and the drain unit, and that has a cross-sectional shape of a dot in a top view.
11. The method of claim 10 , wherein the semiconductor sheet unit has a straight line cross-sectional shape in the top view.
12. The method of claim 10 , wherein the semiconductor sheet unit has a cross-sectional shape other than a straight line in the top view.
13. The method of claim 10 , wherein the semiconductor sheet unit includes a plurality of semiconductor sheets that cooperatively define a cross-sectional shape unit in the top view.
14. The method of claim 13 , wherein the cross-sectional shape unit includes a plurality of cross sections that have the same shape.
15. The method of claim 14 , wherein the cross sections have the same size.
16. The method of claim 14 , wherein the cross sections have different sizes.
17. The method of claim 13 , wherein the cross-sectional shape unit includes a plurality of cross sections that have different shapes.
18. The method of claim 10 , further comprising forming a gate that surrounds the semiconductor sheet unit.