Semiconductor device, manufacturing method for semiconductor device, and electronic device
There is provided a semiconductor device including a first semiconductor base substrate, a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate, a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.
1. A semiconductor device comprising:
a first semiconductor base substrate;
a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate;
a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate; and
an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate.
2. The semiconductor device according to claim 1 , comprising:
a first conductive layer in a wiring layer on the first surface of the first semiconductor base substrate,
wherein a side surface of the through electrode is connected to the first conductive layer.
3. The semiconductor device according to claim 2 , wherein a bottom portion of the through electrode is connected to a second conductive layer provided in the wiring layer on the second semiconductor base substrate, and the first and second conductive layers are connected to each other via the through electrode.
4. The semiconductor device according to claim 2 , wherein the first conductive layer includes an opening connected to the side surface of the through electrode.
5. The semiconductor device according to claim 4 , wherein an opening width of the first conductive layer is smaller than a width of an opening portion of the through electrode.
6. The semiconductor device according to claim 1 , wherein a length of an inside of the insulation layer is greater than a width of an opening portion of the through electrode.
7. The semiconductor device according to claim 4 , wherein the opening of the first conductive layer is formed such that an opening on the second surface side of the first semiconductor base substrate is great and an opening on the first surface side of the first semiconductor base substrate is small.
8. The semiconductor device according to claim 7 , wherein the opening of the first conductive layer is formed in a shape having an inclined surface.
9. The semiconductor device according to claim 8 , wherein an inclination angle of an inner surface of an opening portion of the first conductive layer is equal to or smaller than 40°.
10. The semiconductor device according to claim 2 , comprising:
an electrode protective layer disposed between the insulation layer, the first conductive layer protecting the first conductive layer.
11. The semiconductor device according to claim 10 ,
wherein the electrode protective layer is formed of a same material as an oxide included in the wiring layer on the first surface of the first semiconductor base substrate, and
wherein the first conductive layer is formed of a same material as one of a wire or an electrode included in the wiring layer on the first surface of the first semiconductor base substrate.
12. An electronic device comprising:
a semiconductor device that includes
a first semiconductor base substrate,
a second semiconductor base substrate that is bonded onto a first surface side of the first semiconductor base substrate,
a through electrode that is formed to penetrate from a second surface side of the first semiconductor base substrate to a wiring layer on the second semiconductor base substrate, and
an insulation layer that surrounds a circumference of the through electrode formed inside the first semiconductor base substrate; and
a signal processing circuit that processes an output signal of the semiconductor device.