Method of manufacturing organic light emitting display device
Provided is a method of manufacturing an organic light emitting display device. The method includes: providing a first substrate including: a display portion, and a non-display portion, forming a thin film transistor (TFT) and an organic light emitting diode (OLED) in the display portion of the first substrate, providing a pad portion including: at least one pad contact portion at the non-display portion and electrically connected to the TFT, and a pad insulating portion between adjacent pad contact portions, providing an anti-moisture insulation layer entirely covering the first substrate, adhering an encapsulating substrate onto the anti-moisture insulation portion in correspondence with the display portion, and removing the anti-moisture insulation layer, at the pad contact portion, using a laser.
1. A method of manufacturing an organic light emitting display device, the method comprising:
providing a first substrate comprising:
a display portion; and
a non-display portion;
forming a thin film transistor (TFT) and an organic light emitting diode (OLED) in the display portion of the first substrate;
providing a pad portion comprising:
at least one pad contact portion having a electrode at the non-display portion and electrically connected to the TFT, wherein providing the pad contact portion further comprises: providing a pad electrode at the first substrate; providing a protective layer on a line layer; providing a transparent electrode layer on the protective layer; and providing the anti-moisture insulation layer on the transparent electrode layer;
a pad insulating portion between adjacent pad contact portions;
providing an anti-moisture insulation layer entirely covering the first substrate;
adhering an encapsulating substrate onto the anti-moisture insulation portion in correspondence with the display portion; and
subsequently removing the anti-moisture insulation layer, at the pad contact portion, using a laser, without removing the electrode of the pad contact portion.
2. The method of claim 1 , wherein the transparent electrode layer comprises indium tin oxide (ITO).
3. The method of claim 1 , wherein providing the transparent electrode layer comprises:
providing MoTi; and
providing indium tin oxide (ITO) on the MoTi.
4. The method of claim 1 , wherein the anti-moisture insulation layer comprises a transparent inorganic insulating layer comprising one of, or a multilayer of: SiON, SiN x , SiO 2 , Al 2 O 3 , or AlON.
5. The method of claim 1 , wherein the laser uses an excimer laser comprising a deep ultraviolet (UV) wavelength.
6. The method of claim 5 , wherein the deep UV wavelength is a wavelength range of 100 nm to 300 nm.
7. The method of claim 1 , wherein the pad insulating layer comprises a transparent inorganic insulating layer comprising one of, or a multilayer of: SiON, SiN x , SiO 2 , Al 2 O 3 , or AlON.
8. The method of claim 1 , wherein the removing of the anti-moisture insulation layer comprises removing the anti-moisture insulation layer, on the transparent electrode layer, by using the laser.