Method of manufacturing light emitting element

1. A method of producing light emitting elements comprising:

providing a wafer that includes a growth substrate and a semiconductor structure formed on the growth substrate, a lower side of the wafer being a growth substrate side, and an upper side of the wafer being a semiconductor structure side as an upper side;

forming a separation groove in the wafer from the upper side of the wafer to demarcate portions of the semiconductor structure, the separation groove extending in a depth direction to a location in the wafer;

forming a p-electrode and an n-electrode on an upper side of each of the demarcated portions of the semiconductor structure;

forming a dielectric multilayer film at an upper side of the wafer, including portions defining the separation groove, by using an atomic layer deposition method; and

separating the wafer into a plurality of light emitting elements by removing a portion of the wafer from a lower side of the wafer to at least said location to which the separation groove extends.

2. The method of producing light emitting elements according to claim 1 , further comprising, after forming the p-electrode and the n-electrode and before forming the dielectric multilayer film, forming an insulating layer at an upper side of the wafer, including the portions defining the separation groove.

3. The method of producing light emitting elements according to claim 1 further comprising, after the step of forming the dielectric multilayer film and before the step of removing said portion of the wafer, forming a metal layer at an upper side of the dielectric multilayer film.

4. The method of producing light emitting elements according to claim 1 , wherein:

in the step of providing the wafer, the wafer is provided so as to include the growth substrate and the semiconductor structure having an n-type semiconductor and a p-type semiconductor in that order from the growth substrate side,

in the step of forming the p-electrode and the n-electrode, a light-transmissive layer is formed as the p-electrode, and

in the step of forming the dielectric multilayer film, the dielectric multilayer film is formed at an upper side of the p-electrode.

5. The method of producing light emitting elements according to claim 1 , wherein:

in the step of forming the dielectric multilayer film, the dielectric multilayer film is formed at an upper side of the p-electrode, and the method further comprises:

after the step of forming the dielectric multilayer film and before the step of removing said portion of the wafer, partially removing the dielectric multilayer film disposed at the upper side of the p-electrode; and

forming a p-pad and an n-pad respectively electrically connected to the p-electrode and the n-electrode.

6. The method of producing light emitting elements according to claim 1 , wherein, in the step of forming a separation groove, the separation groove is formed from the upper side of the wafer so as not to reach the growth substrate.

7. The method of producing light emitting elements according to claim 2 , further comprising, after the step of forming the dielectric multilayer film and before the step of removing said portion of the wafer, forming a metal layer at an upper side of the dielectric multilayer film.

8. The method of producing light emitting elements according to claim 7 , wherein, in the step of forming the separation groove, the separation groove is formed from the upper side of the wafer so as not to reach the growth substrate.

9. The method of producing light emitting elements according to claim 1 , wherein, in the step of forming the separation groove, the separation groove is formed so as to gradually widen from the upper side of the wafer toward the lower side of the wafer.

10. The method of producing light emitting elements according to claim 8 , wherein, in the step of forming the separation groove, the separation groove is formed so as to gradually widen from the upper side of the wafer toward the lower side of the wafer.

11. The method of producing light emitting elements according to claim 1 , further comprising, after the step of forming the dielectric multilayer film and before the step of removing said portion of the wafer, attaching a support substrate to the upper side of the wafer by using an adhesive resin.

12. The method of producing light emitting elements according to claim 10 , further comprising, after the step of forming the dielectric multilayer film and before the step of removing said portion of the wafer, attaching a support substrate to the upper side of the wafer by using an adhesive resin.

13. The method of producing light emitting elements according to claim 6 , wherein, in the step of removing said portion of the wafer, the semiconductor structure and the growth substrate are separated and a portion of the semiconductor structure is removed from a lower side of the semiconductor structure to at least said location to which the separation groove extends.

14. The method of producing light emitting elements according to claim 8 , wherein, in the step of removing said portion of the wafer, the semiconductor structure and the growth substrate are separated and a portion of the semiconductor structure is removed from a lower side of the semiconductor structure to at least said location to which the separation groove extends.

15. The method of producing light emitting elements according to claim 12 , wherein, in the step of removing said portion of the wafer, the semiconductor structure and the growth substrate are separated and a portion of the semiconductor structure is removed from a lower side of the semiconductor structure to at least said location to which the separation groove extends.

16. The method of producing light emitting elements according to claim 1 , wherein the dielectric multilayer film contains titanium oxide and silicon oxide.

17. The method of producing light emitting elements according to claim 1 , wherein the light emitting element has a maximum length in a longitudinal direction that is 0.1 times to 0.5 times a maximum length in a lateral direction.

18. The method of producing light emitting elements according to claim 12 , wherein the light emitting element has a maximum length in a longitudinal direction that is 0.1 times to 0.5 times a maximum length in a lateral direction.

19. The method of producing light emitting elements according to claim 18 , wherein, in the step of forming the separation groove, the separation groove is formed with a depth of 3 μm to 7 μm.