Method for manufacturing light emitting device and light emitting device
A manufacturing method of a light emitting device includes a light emitting element disposed over a substrate and a reflective resin disposed along the side surface of the light emitting element. The method includes disposing light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements in the matrix. A reflective resin is disposed to cover the semiconductor elements along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers. The reflective resin and the substrate disposed in between the adjacent light emitting elements is cut in the column or row direction and between the light emitting element and the adjacent semiconductor element in the other direction, to include a light emitting element or a semiconductor element.
1. A light emitting device, comprising:
a light emitting element disposed over a substrate; a phosphor layer disposed over the light emitting element; a semiconductor element disposed adjacent to the light emitting element; and a reflective resin disposed along side surfaces of the light emitting element and the phosphor layer to cover the semiconductor element,
wherein a corner formed by a side surface of the reflective resin on the semiconductor element side and an upper surface of the reflective resin forms an acute angle in a vertical cross-sectional view including the light emitting element and the semiconductor element,
wherein another corner formed by a side surface of the reflective resin on the light emitting element side and the upper surface of the reflective resin forms an obtuse angle in the cross-sectional view.
2. The light emitting device according to claim 1 , wherein a deepest part of a recessed portion formed at the upper surface of the reflective resin is formed directly above the semiconductor element.
3. The light emitting device according to claim 2 , wherein the deepest part of the recessed portion formed at the upper surface of the reflective resin is formed directly above a center of the upper surface of the semiconductor element.