Semiconductor device and method of manufacturing the same

1. A method of manufacturing a semiconductor device, comprising:

forming a structure including a silicon layer having a trench, and interlayer insulating layers and first sacrificial layers, which are alternately stacked on the silicon layer and penetrated through a through-hole connected to the trench,

transforming the silicon layer into a metal silicide layer using a silicidation process;

forming a slit penetrating the interlayer insulating layers and the first sacrificial layers;

forming recess areas by removing the first sacrificial layers through the slit; and

forming conductive layers in the recess areas,

forming a channel layer in the trench and the through-hole connected to the trench, wherein the channel layer includes:

a lower portion formed in the trench and formed along a surface of the metal silicide layer, and

a protruding portion extending from the lower portion of the channel layer and formed in the through-hole, and

wherein the silicidation process is performed after forming the first sacrificial layers and before removing the first sacrificial layers,

wherein the forming of the structure includes:

forming the trench by etching the silicon layer;

filling the inside of the trench with a second sacrificial layer;

alternately stacking the interlayer insulating layers and the first sacrificial layers on the second sacrificial layer and the silicon layer;

forming the through-hole opening the second sacrificial layer through the interlayer insulating layers and the first sacrificial layers; and

removing the second sacrificial layer.

2. The method of claim 1 , before the silicidation process, further comprising

forming a first oxide layer which becomes thinner as moving downward along a sidewall of the through-hole, and opens at least one of the interlayer insulting layers and at least one of the first sacrificial layers, from the lowermost layer.

3. The method of claim 1 , after the silicidation process further comprising:

forming a second oxide layer by oxidizing a sidewall of the first sacrificial layer opened through the first oxide layer;

forming a data storage layer contacting the first oxide layer, the second oxide layer, and the metal silicide layer along surfaces of the through-hole and the trench; and

forming a tunnel insulating layer along the data storage layer.

4. The method of claim 1 , before the removing of the second sacrificial layer, further comprising:

forming a first oxide layer which becomes thinner as moving downward along a sidewall of the through-hole, and opens at least one of the interlayer insulating layers and at least one of the first sacrificial layers from the lowermost layer;

forming a second oxide layer by oxidizing a sidewall of the first sacrificial layer opened through the first oxide layer; and

forming a data storage layer contacting the first and second oxide layers along the sidewall of the through-hole.

5. The method of claim 4 , after the silicidation process, further comprising

forming a tunnel insulating layer contacting the data storage layer and the metal silicide layer along surfaces of the through-hole and the trench.

6. The method of claim 1 , after the silicidation process, further comprising:

forming oxide layers by oxidizing sidewalls of the first sacrificial layers;

forming a data storage layer contacting the interlayer insulating layers, the oxide layers, and the metal silicide layer along surfaces of the through-hole and the trench; and

forming a tunnel insulating layer along the data storage layer.

7. The method of claim 1 , after the silicidation process, further comprising:

forming an oxide layer contacting the metal silicide layer along surfaces of the through-hole and the trench;

forming a data storage layer along the oxide layer; and

forming a tunnel insulating layer along the data storage layer.