Semiconductor device and method for manufacturing the same

1. A method of manufacturing a semiconductor device comprising the steps of:

forming a gate insulating film over a gate electrode;

forming a first non-single crystalline oxide semiconductor film comprising indium over the gate electrode with the gate insulating film interposed therebetween;

forming a second non-single crystalline oxide semiconductor film comprising indium over the first non-single crystalline oxide semiconductor film, the second non-single crystalline oxide semiconductor film having a lower electrical conductivity than the first non-single crystalline oxide semiconductor film;

etching the first non-single crystalline oxide semiconductor film and the second non-single crystalline oxide semiconductor film to form a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer;

forming a conductive layer over the second oxide semiconductor layer;

etching the conductive layer to form a source electrode and a drain electrode, wherein part of the second oxide semiconductor layer between the source electrode and the drain electrode is etched so that a thickness of the second oxide semiconductor layer between the source electrode and the drain electrode is smaller than thicknesses of the second oxide semiconductor layer below the source electrode and the drain electrode;

forming an insulating film comprising silicon over the second oxide semiconductor layer, the source electrode and the drain electrode, wherein an upper surface of the second oxide semiconductor layer between the source electrode and the drain electrode contacts the insulating film; and

heating the first oxide semiconductor layer and the second oxide semiconductor layer at a temperature of 200° C. or higher after forming the insulating film.

2. The method according to claim 1 , wherein each of the first non-single crystalline oxide semiconductor film and the second non-single crystalline oxide semiconductor film is formed by sputtering.

3. The method according to claim 1 , wherein each of the first non-single crystalline oxide semiconductor film and the second non-single crystalline oxide semiconductor film further comprises gallium and zinc.

4. The method according to claim 1 , wherein a thickness of the first non-single crystalline oxide semiconductor film is 1 to 50 nm.

5. The method according to claim 1 , wherein a thickness of the second non-single crystalline oxide semiconductor film is 10 to 300 nm.

6. The method according to claim 1 , wherein each of the source electrode and the drain electrode comprises a first titanium layer, a conductive layer on the first titanium layer, and a second titanium layer on the conductive layer, the first titanium layer being in contact with the second oxide semiconductor layer.

7. The method according to claim 1 , wherein the first oxide semiconductor layer is thinner than the second oxide semiconductor layer.

8. The method according to claim 1 , wherein the second oxide semiconductor layer has a carrier concentration lower than 1×10 17 /cm 3 .

9. The method according to claim 1 , wherein the first oxide semiconductor layer has an electrical conductivity higher than 1×10 −3 S/cm.

10. A method of manufacturing a semiconductor device comprising the steps of:

forming a gate insulating film over a gate electrode;

forming a first non-single crystalline oxide semiconductor film comprising indium by sputtering over the gate electrode with the gate insulating film interposed therebetween;

forming a second non-single crystalline oxide semiconductor film comprising indium by sputtering over the first non-single crystalline oxide semiconductor film successively after forming the first non-single crystalline oxide semiconductor film without exposing the first non-single crystalline oxide semiconductor film to air, the second non-single crystalline oxide semiconductor film having a lower electrical conductivity than the first non-single crystalline oxide semiconductor film;

etching the first non-single crystalline oxide semiconductor film and the second non-single crystalline oxide semiconductor film to form a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer;

forming a conductive layer over the second oxide semiconductor layer;

etching the conductive layer to form a source electrode and a drain electrode, wherein part of the second oxide semiconductor layer between the source electrode and the drain electrode is etched so that a thickness of the second oxide semiconductor layer between the source electrode and the drain electrode is smaller than thicknesses of the second oxide semiconductor layer below the source electrode and the drain electrode;

forming an insulating film comprising silicon over the second oxide semiconductor layer, the source electrode and the drain electrode; and

heating the first oxide semiconductor layer and the second oxide semiconductor layer at a temperature of 200° C. or higher after forming the insulating film.

11. The method according to claim 10 , wherein each of the first non-single crystalline oxide semiconductor film and the second non-single crystalline oxide semiconductor film is formed by sputtering.

12. The method according to claim 10 , wherein each of the first non-single crystalline oxide semiconductor film and the second non-single crystalline oxide semiconductor film further comprises gallium and zinc.

13. The method according to claim 10 , wherein a thickness of the first non-single crystalline oxide semiconductor film is 1 to 50 nm.

14. The method according to claim 10 , wherein a thickness of the second non-single crystalline oxide semiconductor film is 10 to 300 nm.

15. The method according to claim 10 , wherein each of the source electrode and the drain electrode comprises a first titanium layer, a conductive layer on the first titanium layer, and a second titanium layer on the conductive layer, the first titanium layer being in contact with the second oxide semiconductor layer.

16. The method according to claim 10 , wherein the first oxide semiconductor layer is thinner than the second oxide semiconductor layer.

17. The method according to claim 10 , wherein the second oxide semiconductor layer has a carrier concentration lower than 1×10 17 /cm 3 .

18. The method according to claim 10 , wherein the first oxide semiconductor layer has an electrical conductivity higher than 1×10 −3 S/cm.

19. A method of manufacturing a semiconductor device comprising the steps of:

forming a gate insulating film over a gate electrode;

forming a first non-single crystalline oxide semiconductor film comprising indium by sputtering over the gate electrode with the gate insulating film interposed therebetween;

forming a second non-single crystalline oxide semiconductor film comprising indium by sputtering over the first non-single crystalline oxide semiconductor film, the second non-single crystalline oxide semiconductor film having a lower electrical conductivity than the first non-single crystalline oxide semiconductor film;

etching the first non-single crystalline oxide semiconductor film and the second non-single crystalline oxide semiconductor film to form a first oxide semiconductor layer and a second oxide semiconductor layer on the first oxide semiconductor layer;

forming a conductive layer over the second oxide semiconductor layer;

etching the conductive layer to form a source electrode and a drain electrode, wherein part of the second oxide semiconductor layer between the source electrode and the drain electrode is etched so that a thickness of the second oxide semiconductor layer between the source electrode and the drain electrode is smaller than thicknesses of the second oxide semiconductor layer below the source electrode and the drain electrode;

forming a first insulating film comprising silicon and oxygen over the second oxide semiconductor layer, the source electrode and the drain electrode;

forming a second insulating film comprising silicon and nitrogen over the first insulating film; and

heating the first oxide semiconductor layer and the second oxide semiconductor layer at a temperature of 200° C. or higher after forming the second insulating film,

wherein an upper surface of the second oxide semiconductor layer between the source electrode and the drain electrode contacts the first insulating film.

20. The method according to claim 19 , wherein each of the first non-single crystalline oxide semiconductor film and the second non-single crystalline oxide semiconductor film is formed by sputtering.

21. The method according to claim 19 , wherein each of the first non-single crystalline oxide semiconductor film and the second non-single crystalline oxide semiconductor film further comprises gallium and zinc.

22. The method according to claim 19 , wherein a thickness of the first non-single crystalline oxide semiconductor film is 1 to 50 nm.

23. The method according to claim 19 , wherein a thickness of the second non-single crystalline oxide semiconductor film is 10 to 300 nm.

24. The method according to claim 19 , wherein each of the source electrode and the drain electrode comprises a first titanium layer, a conductive layer on the first titanium layer, and a second titanium layer on the conductive layer, the first titanium layer being in contact with the second oxide semiconductor layer.

25. The method according to claim 19 , wherein the first oxide semiconductor layer is thinner than the second oxide semiconductor layer.

26. The method according to claim 19 , wherein the second oxide semiconductor layer has a carrier concentration lower than 1×10 17 /cm 3 .

27. The method according to claim 19 , wherein the first oxide semiconductor layer has an electrical conductivity higher than 1×10 −3 S/cm.

28. A method for manufacturing a semiconductor device comprising:

forming a gate electrode layer over a substrate;

forming a gate insulating film over the gate electrode layer;

forming an oxide semiconductor layer over the gate electrode layer with the gate insulating film therebetween, the oxide semiconductor layer including a first oxide semiconductor film and a second oxide semiconductor film on the first oxide semiconductor film, wherein the second oxide semiconductor film has a lower electrical conductivity than the first oxide semiconductor film;

forming a source electrode layer and a drain electrode layer over and in electrical contact with the oxide semiconductor layer; and

forming an insulating layer over the source electrode layer and the drain electrode layer, wherein the insulating layer is in contact with a portion of the second oxide semiconductor film between the source electrode layer and the drain electrode layer,

wherein each of the first oxide semiconductor film and the second oxide semiconductor film contains indium, gallium, and zinc,

wherein formation of the first oxide semiconductor film includes a step of sputtering in a first oxygen containing atmosphere,

wherein formation of the second oxide semiconductor film includes a step of sputtering in a second oxygen containing atmosphere, and

wherein a proportion of a flow rate of an oxygen gas in the first oxygen containing atmosphere is lower than a proportion of a flow rate of an oxygen gas in the second oxygen containing atmosphere.

29. The method according to claim 28 , wherein an upper portion of the second oxide semiconductor film between the source electrode layer and the drain electrode layer is etched so that a thickness of the second oxide semiconductor film is smaller at the portion between the source electrode layer and the drain electrode layer than portions below the source electrode layer and the drain electrode layer.

30. The method according to claim 28 , wherein the insulating layer comprises silicon oxide.

31. The method according to claim 28 , wherein the insulating layer comprises silicon oxynitride.