Diazadiene-based metal compound, method for preparing same and method for forming a thin film using same
The present invention relates to a diazadiene (DAD)-based metal compound, to a method for preparing the same and to a method for forming a thin film using the same. The diazadiene (DAD)-based metal compound of the present invention is provided in a gaseous state to be formed into a metal thin film or a metal oxide thin film by chemical vapor deposition or atomic layer deposition. Particularly, the diazadiene-based organic metal compound of the present invention has advantages in that it may be formed into a metal thin film or a metal oxide thin film and it can be prepared in a relatively inexpensive way without using highly toxic ligands.
1. A diazadiene-based metal compound represented by any one of the following chemical formulas 1 to 4:
wherein in the chemical formulas 1 to 4,
M denotes Ni, Mn or Co, and
R 1 and R 2 are iso-propyl groups and R 3 and R 4 are hydrogen, and
wherein the diazadiene-based metal compound is liquid.
2. A diazadiene-based metal compound represented by any one of the following chemical formulas 1 to 4:
wherein in the chemical formulas 1 to 4,
M denotes Ni, Co or Mn, and
wherein R 1 and R 2 are iso-propyl groups and R 3 and R 4 are hydrogen.
3. The diazadiene-based metal compound of claim 2 ,
wherein the diazadiene-based metal compound is represented by the chemical formula 3, in which R 1 and R 2 are iso-propyl groups and R 3 and R 4 are hydrogen.
4. The diazadiene-based metal compound of claim 2 ,
wherein the diazadiene-based metal compound is represented by the chemical formula 4 in which R 1 and R 2 are iso-propyl groups and R 3 and R 4 are hydrogen.
5. A thin film forming method, comprising:
depositing a diazadiene-based metal compound used as a source material on a substrate by chemical vapor deposition or atomic layer deposition to form a metal thin film containing nickel, cobalt or manganese, wherein the diazadiene-based metal compound is represented by any one of the following chemical formulas 1 to 4:
wherein in the chemical formulas 1 to 4,
M denotes Ni, Co or Mn, and
wherein R 1 and R 2 are iso-propyl groups and R 3 and R 4 are hydrogen, and
wherein the diazadiene-based metal compound is a liquid.
6. The thin film forming method of claim 5 ,
wherein the diazadiene-based metal compound is in a gaseous state.
7. The thin film forming method of claim 5 ,
wherein a deposition temperature ranges from 50° C. to 700° C. when the diazadiene-based metal compound is deposited.
8. The thin film forming method of claim 6 ,
wherein the diazadiene-based metal compound in the gaseous state is delivered onto the substrate by a method selected from the group consisting of a bubbling method, a vapor phase mass flow controller (MFC) method, a direct liquid injection (DLI) method, and a liquid delivery system (LDS) for delivering the compound while dissolving the compound in an organic solvent.
9. The thin film forming method of claim 5 , further comprising:
using a reactant gas selected from the group consisting of water vapor, oxygen, ozone, hydrogen, ammonia, alcohols, aldehydes, carboxylic acids, silanes, and their combinations, when the diazadiene-based metal compound as a source material is used.
10. The diazadiene-based metal compound of claim 2 ,
wherein the diazadiene-based metal compound is represented by the chemical formula 2, in which R 1 and R 2 are iso-propyl groups and R 3 is hydrogen.