Method and apparatus capable of synthesizing high-density wires in pores and on surface of porous material

1. A method of synthesizing nanowires comprising following steps of:

placing a substrate on which nanowires are to be synthesized inside a reaction furnace;

disposing a covering inside a reaction furnace such that the covering is spaced apart by a predetermined gap from surfaces of the substrate and is arranged in parallel with the substrate;

heating the reaction furnace; and

synthesizing nanowires on the substrate by allowing a flow of a source gas of organic silicon compound into the reaction furnace, the source gas of organic silicon compound being deposited on the substrate while flowing through the predetermined gap between the substrate and the covering,

wherein the covering retards the flow of the source gas of organic silicon compound while flowing through the predetermined gap between the substrate and the covering, the method of synthesizing nanowires is devoid of any catalysts, and the nanowires synthesized on the surfaces of the substrate have a clearer shape as a size of the predetermined gap between the substrate and the covering decreases.

2. The method according to claim 1 , wherein the substrate is a porous substrate.

3. The method according to claim 2 , wherein the nanowires are formed not only on a surface of the porous substrate but also in pores inside the porous substrate.

4. The method according to claim 1 , wherein the gap between the substrate and the covering is preset depending on design criteria.

5. The method according to claim 1 , wherein the covering is connected to a displacing means for displacing the covering and the gap between the substrate and the covering is changed by controlling a displacement of the displacing means using a control unit.