Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
An integrated extreme ultraviolet (EUV) blank production system includes: a vacuum chamber for placing a substrate in a vacuum; a first deposition system for depositing a planarization layer having a planarized top surface over the substrate; and a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum. The EUV blank is in an EUV lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the EUV source; a reticle stage for placing a EUV mask blank with a planarization layer; and a wafer stage for placing a wafer. The EUV blank includes: a substrate; a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface; and a multi-layer stack on the planarization layer.
1. An integrated extreme ultraviolet blank production system comprising:
a vacuum chamber for placing a substrate in a vacuum;
a first deposition system for depositing a planarization layer having a planarized top surface over the substrate, the planarization layer including a flowable film; and
a second deposition system for depositing a multi-layer stack on the planarization layer without removing the substrate from the vacuum.
2. The system as claimed in claim 1 wherein the first deposition system is for depositing the planarization layer of a flowable vapor deposition film to form a top surface of the planarization layer having a greater planarity than a surface underlying the planarization layer.
3. The system as claimed in claim 1 wherein the first deposition system is for depositing the planarization layer to fill a pit imperfection on a surface underlying a top surface of the planarization layer to provide a smooth top surface of the planarization layer.
4. The system as claimed in claim 1 wherein the first deposition system is for depositing the planarization layer to encapsulate a particle on a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
5. The system as claimed in claim 1 wherein the first deposition system is for depositing the planarization layer to fill a pit having an aspect ratio from 1:6 to 30:1 in a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
6. The system as claimed in claim 1 wherein depositing the planarization layer levels out a bump or encapsulates a particle from 10 nm to 30 nm in height on a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
7. The system as claimed in claim 1 wherein the first deposition system is for depositing the planarization layer planarized to have a surface smoothness under 0.5 nm RMS.
8. The system as claimed in claim 1 wherein the second deposition system is for depositing the multi-layer stack above the planarization layer to form an extreme ultraviolet mask blank.
9. The system as claimed in claim 1 wherein the second deposition system is for depositing the multi-layer stack above the planarization layer to form an extreme ultraviolet mirror.
10. An extreme ultraviolet lithography system comprising:
an extreme ultraviolet light source, such as a plasma source;
an extreme ultraviolet mirror for directing light from the extreme ultraviolet light source;
a reticle stage for placing an extreme ultraviolet mask blank for receiving extreme ultraviolet light from the extreme ultraviolet mirror, the extreme ultraviolet mask blank including a planarization layer, the planarization layer including a flowable film; and
a wafer stage for placing a wafer.
11. The system as claimed in claim 10 wherein the extreme ultraviolet mask blank has the planarization layer of a flowable chemical vapor deposition film having a greater planarity than a surface underlying the planarization layer.
12. The system as claimed in claim 10 wherein the extreme ultraviolet mask blank has the planarization layer to fill a pit imperfection on a surface underlying a top surface of the planarization layer to provide a smooth top surface of the planarization layer.
13. The system as claimed in claim 10 wherein the extreme ultraviolet mask blank has the planarization layer to encapsulate a particle on a surface underlying the planarization layer.
14. The system as claimed in claim 10 wherein the extreme ultraviolet mask blank has the planarization layer to fill a pit having an aspect ratio from 1:6 to 30:1 in a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
15. The system as claimed in claim 10 wherein the extreme ultraviolet mask blank has the planarization layer to cover a bump or encapsulate a particle from 10 nm to 300 nm in height on a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
16. The system as claimed in claim 10 wherein the extreme ultraviolet mask blank has the planarization layer planarized to have a surface smoothness under 0.5 nm RMS.
17. The system as claimed in claim 10 wherein the mirror has a mirror planarization layer to fill a pit having an aspect ratio from 1:6 to 30:1 in a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
18. The system as claimed in claim 10 wherein the mirror has a mirror planarization layer to encapsulate a particle from 10 nm to 300 nm in height on a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
19. The system as claimed in claim 10 wherein the mirror has a mirror planarization layer planarized to have a surface smoothness under 0.5 nm RMS.
20. An extreme ultraviolet blank comprising:
a substrate;
a planarization layer to compensate for imperfections related to the surface of the substrate, the planarization layer having a flat top surface, the planarization layer including a flowable film; and
a multi-layer stack on the planarization layer.
21. The blank as claimed in claim 20 wherein the planarization layer includes a top surface of the planarization layer formed from a flowable chemical vapor deposition film and having a greater planarity than a surface with imperfections underlying the planarization layer.
22. The blank as claimed in claim 20 wherein the planarization layer is formed to a thickness in the range of 100 Å to 10,000 Å.
23. The blank as claimed in claim 20 wherein the planarization layer fills a pit imperfection on a surface underlying a top surface of the planarization layer.
24. The blank as claimed in claim 20 wherein the planarization layer encapsulates a particle on a surface underlying the planarization layer.
25. The blank as claimed in claim 20 wherein the planarization layer fills a pit having an aspect ratio from 1:6 to 30:1 in a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
26. The blank as claimed in claim 20 wherein the planarization layer encapsulates a particle from 10 nm to 300 nm in height on a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
27. The blank as claimed in claim 20 wherein the planarization layer covers a bump from 10 nm to 300 nm in height on a surface underlying the planarization layer to provide a smooth top surface of the planarization layer.
28. The blank as claimed in claim 20 wherein the planarization layer is planarized to have a surface smoothness under 0.5 nm RMS.
29. The blank as claimed in claim 20 wherein the multi-layer stack forms an extreme ultraviolet mask blank.
30. The blank as claimed in claim 20 wherein the multi-layer stack forms an extreme ultraviolet mirror.
31. The blank as claimed in claim 20 wherein the substrate is of an ultra-low thermal expansion material.
32. The blank as claimed in claim 20 wherein the substrate is glass.