Plasma processing apparatus
In a capacitively coupled plasma processing apparatus, a susceptor (lower electrode) 16 within a decompression chamber 10 faces an upper electrode 46 serving as a shower head. The susceptor 16 is electrically connected with a first high frequency power supply 36 and a second high frequency power supply 38 via matching devices 40 and 42 , respectively. The first high frequency power supply 36 is formed of a linear amplifier type high frequency power supply and outputs a first high frequency power RF 1 for plasma generation. The second high frequency power supply 38 is formed of a switching type high frequency power supply and outputs a second high frequency power RF 2 for ion attraction. A residual high frequency power removing unit 74 is connected to a high frequency power supply line 45 on a side of the second high frequency power supply 38.
1. A plasma processing apparatus of generating plasma of a processing gas in an evacuable processing chamber that accommodates a substrate to be processed, which is loaded thereinto and unloaded therefrom, and performing a process on the substrate under the plasma, the plasma processing apparatus comprising:
a switching type high frequency power supply, having a DC power supply and a switching device, configured to convert a DC power outputted from the DC power supply into a high frequency power by turning on/off the switching device with a switching pulse at a high frequency;
a high frequency power supply line through which the high frequency power outputted from the high frequency power supply is applied to the plasma;
a matching device configured to match impedance on a side of the high frequency power supply with load impedance on the high frequency power supply line;
a high frequency power modulation unit that controls the high frequency power supply to alternately repeat an on-period time where the high frequency power is in an on state and an off-period time where the high frequency power is in an off state at a preset pulse frequency; and
a residual high frequency power removing unit configured to remove the high frequency power remaining on the high frequency power supply line during the off-period time in each cycle of the pulse frequency,
wherein the residual high frequency power removing unit is provided on the high frequency power supply line between the switching device and the matching device.
2. The plasma processing apparatus of claim 1 ,
wherein the high frequency power supply includes switching devices of a first group and switching devices of a second group constituting a full-bridge circuit,
in each cycle of the high frequency power with the switching pulse, while the switching devices of the second group are maintained in an off state, the switching devices of the first group are in an on state during a former half cycle, and
while the switching devices of the first group are maintained in an off state, the switching devices of the second group are in an on state during a latter half cycle.
3. The plasma processing apparatus of claim 1 ,
wherein the high frequency power supply includes a first switching device and a second switching device constituting a half-bridge circuit,
in each cycle of the high frequency power with the switching pulse, while the second switching device is maintained in an off state, the first switching device is in an on state during a former half cycle, and
while the first switching device is maintained in an off state, the second switching device is in an on state during a latter half cycle.
4. The plasma processing apparatus of claim 1 ,
wherein the high frequency power supply is configured to continuously supply the switching pulse to the switching device during the on-period time and stop the supply of the switching pulse to the switching device during the off-period time in each cycle of the pulse frequency.
5. The plasma processing apparatus of claim 1 ,
wherein the high frequency power supply includes a series resonance circuit connected in series with the switching device with respect to a load circuit.
6. The plasma processing apparatus of claim 1 ,
wherein the residual high frequency power removing unit includes a resistance and a switch connected in series between the high frequency power supply line and a ground potential member, and is configured to maintain the switch in an off state during the on-period time and maintain the switch in an on state during the off-period time in each cycle of the pulse frequency.
7. The plasma processing apparatus of claim 1 ,
wherein a high frequency electrode configured to mount thereon the substrate is provided within the processing chamber, and the high frequency power supply line is electrically connected to the high frequency electrode.