Fluorine-based hardmask removal
A method of removing titanium nitride hardmask is described. The hardmask resides above a low-k dielectric layer prior to removal and the low-k dielectric layer retains a relatively low net dielectric constant after the removal process. The low-k dielectric layer may be part of a dual damascene structure having copper at the bottom of the vias. A non-porous carbon layer is deposited prior to the titanium nitride hardmask removal to protect the low-k dielectric layer and the copper. The titanium nitride hardmask is removed with a gas-phase etch using plasma effluents formed in a remote plasma from a fluorine-containing precursor. Plasma effluents within the remote plasma are flowed into a substrate processing region where the plasma effluents react with the titanium nitride.
1. A method of removing titanium nitride hardmasks, the method comprising:
forming a carbon-containing layer over low-k dielectric walls over an underlying copper layer on a patterned substrate, wherein the low-k dielectric walls form a trench and a via fluidly coupled to one another and the low-k dielectric walls are capped with titanium nitride hardmasks, wherein the titanium nitride hardmasks overhang the low-k dielectric walls;
dry-etching the carbon-containing layer to expose the titanium nitride hardmasks leaving behind a remainder of the carbon-containing layer;
placing the patterned substrate in a substrate processing region of a substrate processing chamber;
flowing a radical-fluorine precursor into the substrate processing region, wherein the radical-fluorine precursor is prevented from reacting with the underlying copper layer and the low-k dielectric walls by the remainder of the carbon-containing layer;
etching away the titanium nitride hardmasks, wherein an electron temperature within the substrate processing region is below 0.5 eV during the operation of etching away the titanium nitride hardmasks; and
removing the remainder of the carbon-containing layer.
2. The method of claim 1 further comprising an operation of filling the via and the trench with copper after the operation of removing the remainder of the carbon-containing layer.
3. The method of claim 1 wherein a copper barrier dielectric is disposed between the underlying copper layer and at least one of the low-k dielectric walls.
4. The method of claim 1 wherein the radical-fluorine-precursor is prevented from reacting with the low-k dielectric walls by the remainder of the carbon-containing layer.
5. The method of claim 1 wherein the carbon-containing layer consists only of carbon, hydrogen and nitrogen.
6. A method of removing titanium nitride hardmasks, the method comprising:
forming a carbon-containing layer over low-k dielectric walls over an underlying copper layer on a patterned substrate, wherein the low-k dielectric walls form a gap and the patterned substrate further comprises titanium nitride hardmasks above the low-k dielectric walls, wherein at least one of the titanium nitride hardmasks is wider than an underlying supporting low-k dielectric wall;
etching the carbon-containing layer to expose the titanium nitride hardmasks leaving behind a remainder of the carbon-containing layer;
placing the patterned substrate in a substrate processing region of a substrate processing chamber;
flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents;
etching the titanium nitride hardmasks by flowing the plasma effluents into the substrate processing region through through-holes in a showerhead disposed between the substrate processing region and the remote plasma region, wherein the plasma effluents do not react with the underlying copper layer as a result of a presence of the remainder of the carbon-containing layer, wherein an electron temperature within the substrate processing region is below 0.5 eV during the operation of etching the titanium nitride hardmasks; and
removing the remainder of the carbon-containing layer.
7. The method of claim 6 wherein the operation of etching the titanium nitride hardmasks removes the titanium nitride hardmasks.
8. The method of claim 6 wherein the substrate processing region is plasma-free during the operation of etching the titanium nitride hardmasks.
9. The method of claim 6 wherein the operation of flowing the fluorine-containing precursor further comprises flowing a hydrogen-containing precursor into the remote plasma region.
10. The method of claim 6 wherein the fluorine-containing precursor comprises a precursor selected from the group consisting of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride, hydrogen fluoride and xenon difluoride.
11. The method of claim 6 wherein a width of the via is less than 50 nm.
12. The method of claim 6 wherein a width of the trench is less than 70 nm.