Process for the production of solar cells having a local back surface field (LBSF)

1. A process for producing a solar cell having a local back surface field, comprising etching in one etching step a phosphosilicate glass layer and an underlying silicon layer by a printed-on etching paste, and back surface polishing and back surface edge insulating in one step by an alkaline etching paste.

2. A process according to claim 1 , wherein the alkaline etching paste for the back surface polishing and the back surface edge insulating comprises, as etching component, NaOH, KOH or a mixture thereof, and which etches a phosphosilicate glass layer and an underlying silicon layer in one step.

3. A process according to claim wherein contact windows are etched into a back surface multilayer (passivation layer and SiNx) of the wafer by an acidic etching paste which has particular selectivity for silicon layers.

4. A process according to claim 1 , comprising

I. Texturing of the surface

II. Phosphorus doping (˜65 Ω/sq diffusion of POCl 3 )

III. Etching of the back surface by an alkaline etching paste, by which the surface is polished and at the same time the p/n junction is opened, where the etching paste is printed onto the back surface by stencil printing, the paste is activated in a belt furnace at about 150° C. for 5 min, and the wafer is subsequently rinsed with DI water,

IV. Coating of the back surface with an SiO2 or Al2O3 passivation layer having a thickness of 15-30 nm and subsequent coating of the back surface and front surface with silicon nitride (70-100 nm) by plasma enhanced chemical vapour deposition (PECVD-SiN x )

V. Printing-on of the etching paste by screen printing, heating in the belt furnace and rinsing with DI water

VI. Screen printing for metallisation of the front surface and the back surface with subsequent sintering (co-firing).

5. A process according to claim 1 , wherein the alkaline etching paste comprises KOH.

6. A process according to claim 1 , wherein opening the back surface passivation layer is by a phosphoric acid-containing etching paste.

7. A process according to claim 1 , wherein the an alkaline etching paste comprises NaOH, KOH or a mixture thereof in an amount of 5 to 40% by weight.

8. A process according to claim 7 , wherein the alkaline etching paste is a KOH-containing etching paste, and comprises, as solvent, glycerol, ethylene glycol, polyethylene glycol, octanol, 1,3-propanediol, 1,4-butanediol, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, dimethyl sulfoxide or gamma-butyrolactone, in pure form or in a mixture.

9. A process according to claim 7 , wherein the alkaline etching paste is a KOH-containing etching paste, and comprises at least one non-particulate thickener.

10. A process according to claim 7 , wherein the alkaline etching paste is a KOH-containing etching paste, and comprises a non-particulate thickener selected from the group consisting of polyvinylpyrrolidone, polyacrylates, carboxymethylcellulose and hydroxypropylcellulose in pure form or in a mixture.

11. A process according to claim 7 , wherein the alkaline etching paste is a KOH-containing etching paste, and comprises a particulate thickener selected from the group consisting of carbon black, pyrogenic silicic acid, magnesium aluminium silicates and low-melting wax particles in pure form or in a mixture.

12. A process according to claim 7 , wherein the alkaline etching paste is a KOH-containing etching paste, and comprises a thickener in an amount of 0.1-35% by weight.