Packaged semiconductor devices, methods of packaging semiconductor devices, and PoP devices

1. A method of packaging a semiconductor device, the method comprising:

forming a plurality of through-package vias (TPVs) over a carrier;

bonding the carrier to a semiconductor device to the carrier, the semiconductor device including

a plurality of contact pads disposed on a surface thereof,

an insulating material disposed over the plurality of contact pads, and

a plurality of laser-drilled openings in the insulating material each opening aligned with a respective one of the plurality of contact pads;

forming a molding material over the carrier between the plurality of TPVs and the semiconductor device; and

forming a redistribution layer (RDL) over the insulating material and the plurality of openings in the insulating material, wherein a portion of the RDL is coupled to a top surface of at least one of the plurality of contact pads.

2. The method according to claim 1 , further comprising a passivation formed over a portion of respective ones of the plurality of contact pads and wherein the insulating material comprises a polymer layer.

3. The method of claim 1 , wherein the insulating material comprises a passivation layer and a polymer layer disposed over the passivation layer.

4. The method of claim 3 , wherein the passivation layer and the polymer layer are laser drilled at a same time.

5. The method of claim 3 , wherein forming the plurality of openings in the insulating material comprises forming a plurality of first openings in the polymer layer, wherein the passivation layer includes a plurality of second openings, wherein each of the plurality of second openings in the passivation layer is disposed over one of the plurality of contact pads, and wherein forming the plurality of first openings in the polymer layer comprises forming each of the plurality of first openings in the polymer layer within one of the second openings in the passivation layer.

6. The method of claim 1 , wherein the insulating material comprises a top surface comprising a first height, wherein the molding material comprises a top surface comprising a second height, wherein the second height is substantially the same as the first height, and wherein a portion of the RDL comprises wiring having a bottom surface that is coupled to the top surface of the insulating material.

7. The method of claim 1 , wherein the step forming a redistribution layer (RDL) over the insulating material and the plurality of openings in the insulating material comprises forming a single continuous conductor that extends on a top surface of the insulating material and into the laser-drilled openings in the insulating material.

8. The method of claim 1 , further comprising forming the plurality of laser-drilled openings in the insulating material, wherein the step of forming the plurality of laser-drilled openings in the insulating material leaves a jagged profile in the insulating material.

9. The method of claim 1 , wherein the step of forming a molding material further comprises removing a top portion of the molding material to expose top surfaces of the TPVs.

10. A method of packaging a semiconductor device, the method comprising:

forming a through-package via (TPV) over a carrier;

coupling a semiconductor device to the carrier, the semiconductor device including a contact pad disposed on a surface thereof and an insulating material disposed over the contact pad;

encapsulating the carrier and the TPV and the semiconductor device in a molding compound, wherein a top surface of the insulating material is exposed;

laser drilling the top surface of the insulating material to form an opening aligned with the contact pad; and

forming a redistribution layer (RDL) over the insulating material, at least a portion of the RDL being in contact with the contact pad.

11. The method of claim 10 , wherein the step of forming the RDL includes forming single continuous conductor that extends on a top surface of the insulating material and into the laser-drilled openings in the insulating material.

12. The method of claim 10 , further comprising:

removing the carrier; and

singulating the semiconductor device from other semiconductor devices attached to the carrier.

13. The method of claim 10 , wherein the step of forming a through-package via (TPV) over a carrier comprises:

forming a seed layer over the carrier; and

plating a conductive material over the seed layer.

14. The method of claim 13 , further comprising:

forming a layer of photoresist over the seed layer;

patterning the layer of photoresist to expose first portions of the seed layer;

plating the conductive material over the exposed first portions of the seed layer;

removing the layer of photoresist to expose second portions of the seed layer; and

removing the exposed second portions of the seed layer.

15. The method of claim 10 , wherein the step of laser drilling the top surface of the insulating material comprises laser drilling a passivation layer and a polymer layer disposed on the passivation layer.

16. The method of claim 12 , further comprising:

forming the insulating material before forming the TPV; and

laser drilling the top surface of the insulating material, before singulating the semiconductor device from other semiconductor devices attached to the carrier.

17. The method of claim 10 , wherein the step of forming a redistribution layer includes a process selected from the group consisting of electrolytic plating, electro-less plating, sputtering, chemical vapor deposition methods, photolithography processes, and combinations thereof.

18. A method of forming a packaged semiconductor device comprising:

forming a plurality of contact pads on a first side of an integrated circuit die;

depositing a passivation layer over the first side of the integrated circuit die;

forming openings in the passivation layer aligned to respective ones of the plurality of contact pads;

depositing a polymer layer disposed over the passivation layer;

laser drilling in the polymer layer, openings aligned to respective ones of the openings in the passivation layer;

forming a plurality of through-package vias (TPVs) adjacent the integrated circuit die;

forming a molding material around the integrated circuit die, the passivation layer, the polymer layer, and the plurality of TPVs;

planarizing a top surface of the molding material to be substantially co-planar with a surface of the polymer layer;

forming a redistribution layer (RDL) disposed over the molding material, the plurality of TPVs, and the polymer layer, wherein the RDL includes wiring that is extends through the laser-drilled openings in the polymer layer and the openings in the passivation layer;

forming an insulating material disposed over a second side of the integrated circuit die opposite the first side and over a bottom surface of the molding material; and

forming in the insulating material, openings aligned with respective ones of the TPVs.

19. The method of claim 18 wherein the openings in the polymer layer and the openings in the passivation layer are formed at a same time by laser drilling.

20. The method of claim 18 , wherein the RDL is a plated onto the polymer layer and into the openings in the polymer layer in a single process.