IP Library › Granted Patent US 9,360,749
Granted Patent B2
US 9,360,749 · App. 14/260,651 · Granted Jun 7, 2016

Pellicle structure and method for forming the same

Inventors: Yun-Yue Lin (Hsinchu, TW); Chia-Jen Chen (Jhudong Township, TW); Hsin-Chang Lee (Zhubei, TW); Anthony Yen (Hsinchu, TW)
Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
G03F1/62G03F1/142G03F1/64
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Quick Facts
Patent No.
US 9,360,749
App. No.
14/260,651
Granted
Jun 7, 2016
Kind
B2
Abstract

A pellicle structure, a pellicle-mask structure, and a method for forming the pellicle structure are provided. The pellicle structure includes a pellicle film made of a carbon-based material. In addition, the pellicle film is configured to protect a mask structure in a lithography process. The pellicle-mask structure includes a mask substrate having a mask pattern formed over the mask substrate and the pellicle frame disposed on the mask substrate. The pellicle-mask structure further includes the pellicle film disposed on the pellicle frame.

Claims (34)

1. A pellicle structure, comprising:

a single-layer pellicle film made of a carbon-based material, wherein the pellicle film is configured to protect a mask structure in a lithography process.

2. The pellicle structure as claimed in claim 1 , wherein the carbon-based material is graphene.

3. The pellicle structure as claimed in claim 1 , wherein the single-layer pellicle film is a single-layer graphene.

4. The pellicle structure as claimed in claim 1 , wherein the single-layer pellicle film has a thickness in a range from about 0.01 μm to about 100 μm.

5. The pellicle structure as claimed in claim 1 , further comprising:

a pellicle frame attached to the single-layer pellicle film.

6. The pellicle structure as claimed in claim 5 , wherein the single-layer pellicle film has a peripheral region and a central region, and the pellicle frame is in direct contact with the peripheral region of the single-layer pellicle film.

7. The pellicle structure as claimed in claim 5 , wherein the single-layer pellicle film has a peripheral region and a central region, and no supporting structure is disposed at the central region of the single-layer pellicle film.

8. A pellicle-mask structure, comprising:

a mask substrate having a mask pattern formed over the mask substrate;

a pellicle frame disposed on the mask substrate; and

a single-layer pellicle film disposed on the pellicle frame, wherein the single-layer pellicle film is made of a carbon-based material.

9. The pellicle-mask structure as claimed in claim 8 , wherein the single-layer pellicle film is a single-layer graphene.

10. The pellicle-mask structure as claimed in claim 8 , wherein the pellicle frame is configured to secure the single-layer pellicle film to the mask substrate.

11. The pellicle-mask structure as claimed in claim 8 , wherein the single-layer pellicle film has a thickness in a range from about 0.01 μm to about 100 μm.

12. The pellicle-mask structure as claimed in claim 8 , wherein the single-layer pellicle film has a length in a range from about 6 inches to about 10 inches.

13. A method for forming a pellicle structure, comprising:

forming a metal layer over a substrate;

forming a pellicle film made of a carbon-based material over the metal layer;

forming a polymer layer over the pellicle film;

removing the metal layer and the substrate from the pellicle film;

attaching a pellicle frame to the pellicle film; and

removing the polymer layer.

14. The method for forming a pellicle structure as claimed in claim 13 , wherein the carbon-based material is graphene.

15. The method for forming a pellicle structure as claimed in claim 13 , wherein the pellicle film is a single-layer graphene, a double-layer graphene, or a multiple-layer graphene.

16. The method for forming a pellicle structure as claimed in claim 13 , wherein the metal layer is made of c copper (Cu), nickel (Ni), iron (Fe), zinc (Zn), tantalum (Ta), indium (In), manganese (Mn), chromium (Cr), titanium (Ti), platinum (Pt), magnesium (Mg), aluminum (Al), zirconium (Zr), iridium (Ir), tungsten (W), lanthanum (La), niobium (Nb), cobalt (Co), molybdenum (Mo), silver (Ag), gold (Au), or a related alloy.

17. The method for forming a pellicle structure as claimed in claim 13 , wherein the polymer layer is made of polymethylmethacrylate (PMMA), polystyrene (PS), polyimide, epoxy, benzocyclobutene (BCB), or polybenzoxazole (PBO).

18. The method for forming a pellicle structure as claimed in claim 13 , wherein the pellicle frame is attached to the pellicle film through electrostatic force.

19. The method for forming a pellicle structure as claimed in claim 18 , wherein the step of attaching a pellicle frame to the pellicle film comprises:

exposing the pellicle frame to an X-ray, such that charges are induced at a top surface of the pellicle frame; and

attaching the top surface of the pellicle frame to the pellicle film.

20. The method for forming a pellicle structure as claimed in claim 13 , wherein the pellicle frame is configured to secure the pellicle film to a mask structure.

21. The method for forming a pellicle structure as claimed in claim 13 , wherein the pellicle film is a single-layer pellicle film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 21, 2014
From: LIN, YUN-YUE; CHEN, CHIA-JEN; LEE, HSIN-CHANG; YEN, ANTHONY
To: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 032943/0260 →
Continuity (1)
Related Publication 20150309404A1 · Oct 29, 2015