IP Library › Granted Patent US 9,368,472
Granted Patent B2
US 9,368,472 · App. 13/955,246 · Granted Jun 14, 2016

Flip-chip assembly process for connecting two components to each other

Inventors: Baptiste Goubault de Brugiere (La Buisse, FR); Alexis Bedoin (Fontaine, FR)
Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
H01L24/81H01L24/14H01L24/16H01L24/83H01L24/92H01L24/13H01L24/17H01L2224/13005H01L2224/13082H01L2224/13109H01L2224/13111H01L2224/13124H01L2224/13139H01L2224/13147H01L2224/1403H01L2224/1416H01L2224/14051H01L2224/14131H01L2224/14505H01L2224/1601H01L2224/16104H01L2224/16225H01L2224/16227H01L2224/1703H01L2224/17505H01L2224/73103H01L2224/73203H01L2224/8114H01L2224/8183H01L2224/81099H01L2224/81193H01L2224/81201H01L2224/81345H01L2224/83102H01L2224/9221H01L2924/0132H01L2924/0133
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Quick Facts
Patent No.
US 9,368,472
App. No.
13/955,246
Granted
Jun 14, 2016
Kind
B2
Abstract

The invention relates to a flip-chip assembly process for connecting two microelectronic components ( 1, 2 ) to each other. According to the invention, it is possible either to proportion the spacers ( 24 ) so that they are smaller than the interconnect bumps ( 22 ) or to oversize the latter so that their deformation, after having been plastic during the insertion of connective inserts ( 12 ), returns to the elastic regime once assembly contact between components ( 1,2 ) has been reached. Thanks to the invention, it is possible to control with great precision the gap between the two components during their assembly, and this without adding any additional steps to their manufacturing or to the assembly process.

Claims (33)

1. A flip-chip assembly process for connecting two microelectronic components to each other, said components each comprising a face called the assembly face, in which the two assembly faces are brought together and a given constant force F is applied to one and/or the other of the components, one and/or the other assembly face(s) comprising:

connective inserts of stiff material;

interconnect bumps of ductile material having a given elastic limit σ e , the interconnect bumps of a component having an area S1 of contact with the other component once the two components have been assembled; and

spacer bumps, called spacers, the spacers of a component having an area S2 of contact with the other component once the two components have been assembled,

process in which, prior to the application of the force F:

the inserts are aligned opposite the interconnect bumps;

on the one hand, the height H of the spacers is set so that it is greater than that h of the connective inserts once the two components have been assembled and, on the other hand, the area S2 of the spacers is set so that, when they make contact with the other component, the stress σ generated in the interconnect bumps, generated by the force F, equal to F/(S1+S2), is less than or equal to their elastic limit σ e ; and then

the given constant force F is applied in order to make the inserts penetrate into the interconnect bumps until the spacers of one component are brought into assembly contact with the other component, defining the contact areas S1 and S2.

2. The process of claim 1 , wherein the interconnect bumps and the spacers are produced from the same material.

3. The process of claim 1 , wherein the interconnect pitch between two connection pads of a component is smaller than or equal to 50 μm.

4. The process of claim 1 , wherein the spacers are of parallelepipedal or cylindrical shape.

5. The process of claim 1 , wherein the spacers are arranged in the shape of a discontinuous ring or in the shape of a continuous peripheral strip.

6. The process of claim 1 , wherein the spacers are distributed in one or more groups within the bumps.

7. The process of claim 1 , wherein the alignment and the application of the force F are carried out at room temperature.

8. The process of claim 1 , wherein the ductile material forming the interconnect bumps and, if relevant, the spacers is (are) chosen from indium, an aluminium-copper alloy, SnAgCu, SnAg, AgCu, SnCu, Al alone and Cu alone.

9. The process of claim 1 , wherein the inserts are blind-microtubes the bases of which tubes are fixed to connection pads.

10. The process of claim 1 , wherein once the stress generated in the interconnect bumps is less than or equal to their elastic limit σ e , the force F is maintained for a certain time.

11. The process of claim 1 , wherein the gap between the two components, corresponding to the height H or H′, is less than 20 μm and typically equal to 2 μm.

12. The process of claim 1 , wherein one of the components is a chip and the other component is a printed circuit board.

13. A flip-chip assembly process for connecting two microelectronic components to each other, said components each comprising a face called the assembly face, wherein the two assembly faces are brought together and a given constant force F is applied to one and/or the other of the components, one and/or the other assembly face(s) comprising:

connective inserts of stiff material;

interconnect bumps of ductile material having a given elastic limit σ e , the interconnect bumps of a component having an area S′1 of contact with the other component once both components have been assembled;

process wherein, prior to the application of the force F:

the inserts are aligned with the interconnect bumps;

on the one hand, the height H′ of the interconnect bumps is set so that it is greater than that h of the connective inserts once the two components have been assembled and, on the other hand, the area S′1 of the bumps is set so that when they make contact with the other component the stress σ generated in the interconnect bumps, generated by the force F, equal to F/S′1, is less than or equal to their elastic limit σ e ; and then

the given constant force F is applied in order to make the inserts penetrate into the bumps until the bumps of a component are brought into assembly contact with the other component, defining the contact area S′1.

14. The process of claim 13 , wherein the interconnect pitch between two connection pads of a component is larger than or equal to 20 μm.

15. The process of claim 13 , wherein the alignment and the application of the force F are carried out at room temperature.

16. The process of claim 13 , wherein the ductile material forming the interconnect bumps and, if relevant, the spacers is (are) chosen from indium, an aluminium-copper alloy, SnAgCu, SnAg, AgCu, SnCu, Al alone and Cu alone.

17. The process of claim 13 , wherein the inserts are blind-microtubes the bases of which tubes are fixed to connection pads.

18. The process of claim 13 , wherein once the stress generated in the interconnect bumps is less than or equal to their elastic limit σ e , the force F is maintained for a certain time.

19. The process of claim 13 , wherein the gap between the two components, corresponding to the height H or H′, is less than 20 μm and typically equal to 2 μm.

20. The process of claim 13 , wherein one of the components is a chip and the other component is a printed circuit board.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 7, 2013
From: DE BRUGIERE, BAPTISTE GOUBAULT; BEDOIN, ALEXIS
To: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Reel/Frame 031355/0715 →
Priority Claims (1)
FR 12 57406 · Jul 31, 2012 · national
Continuity (1)
Related Publication 20140038355A1 · Feb 6, 2014