FinFET device with dual-strained channels and method for manufacturing thereof
A FinFET device and a method for manufacturing a FinFET device is provided. An example device may comprise a substrate including at least two fin structures. Each of the at least two fin structures may be in contact with a source and drain region and each of the at least two fin structures may include a strain relaxed buffer (SRB) overlying and in contact with the substrate and an upper layer overlying and in contact with the SRB. The composition of the upper layer and the SRB may be selected such that the upper layer of a first fin structure is subjected to a first mobility enhancing strain in the as-grown state, the first mobility enhancing strain being applied in a longitudinal direction from the source region to the drain region and where at least an upper part of the upper layer of a second fin structure is strain-relaxed.
1. A dual channel FinFET device having at least one channel subjected to a mobility enhancement strain, the device comprising:
a substrate comprising at least two fin structures separated by an isolation region, wherein each of the at least two fin structures is in physical contact with a source region and a drain region,
wherein each of the at least two fin structures comprise:
an upper layer suitable to form an n-type channel or a p-type channel, and
a strain-relaxed buffer (SRB) underlying and in contact with the upper layer, and overlying and in contact with the substrate,
wherein, for a first fin structure, compositions of the upper layer and the SRB are selected such that the upper layer of the first fin structure is subjected to a mobility enhancing strain in an as-grown state, the mobility enhancing strain being applied in a longitudinal direction from the source region to the drain region, and
wherein at least a portion of the upper layer of a second fin structure comprises a strain-relaxed upper layer.
2. The device according to claim 1 , wherein the mobility enhancing strain is a compressive strain.
3. The device according to claim 2 , wherein the SRB comprises Si 1-x Ge x and the upper layer comprises Si 1-y Ge y , wherein y>x, 0<x<1 and 0<y≦1.
4. The device according to claim 2 , wherein the SRB comprises Si 1-w C w and the upper layer comprises Si 1-y Ge y , wherein 0<w≦0.1 and 0≦y≦0.25.
5. The device according to claim 1 , wherein the mobility enhancing strain is a tensile strain.
6. The device according to claim 5 , wherein the SRB comprises Si 1-x Ge x and the upper layer comprises Si 1-y Ge y , wherein y<x, 0<x<1 and 0≦y<1.
7. The device according to claim 5 , wherein the SRB comprises Ge 1-t Sn t and the upper layer comprises Si 1-y Ge y , wherein 0<t≦0.1 and 0.75≦y≦1.
8. A dual channel FinFET device comprising:
a substrate comprising at least two fin structures separated by an isolation region, wherein each of the at least two fin structures is in physical contact with a source region and a drain region, and wherein each of the at least two fin structures comprises a strain relaxed buffer (SRB), wherein the SRB comprises at least a first SRB layer overlying and in contact with the substrate and a second SRB layer overlying and in contact with the first SRB layer;
a first fin structure of the at least two fin structures comprising a first upper layer overlying and in contact with the second SRB layer of the first fin structure, the first upper layer being suitable to form an n-type or p-type channel, wherein a composition of the first upper layer and the second SRB layer of the first fin structure is selected such that the first upper layer is subjected to a first mobility enhancing strain in an as-grown state, the first mobility enhancing strain being applied in a longitudinal direction from the source region to the drain region; and
a second fin structure of the at least two fin structures comprising a third SRB layer and a second upper layer, wherein the third SRB layer is overlying and in contact with the second SRB layer of the second fin structure, wherein the second upper layer is overlying and in contact with the third SRB layer, wherein a composition of the second upper layer is selected such that the second upper layer is subjected to a second mobility enhancing strain in an as-grown state, the second mobility enhancing strain being applied in a longitudinal direction from the source region to the drain region.
9. The device according to claim 8 , wherein the second mobility enhancing strain is a compressive strain and the first mobility enhancing strain is a tensile strain.
10. The device according to claim 8 , wherein the first SRB layer comprises Si 1-x Ge x and the second SRB layer comprises Si 1-y Ge y , and wherein each of the first upper layer and the second upper layer comprises Si 1-z Ge z , wherein y<z<x, 0<x≦1, 0<y<1, and 0<z<1.
11. The device according to claim 8 , wherein the first SRB layer comprises Si 1-x Ge x and the second SRB layer comprises Si 1-w C w , and wherein each of the first upper layer and the second upper layer comprises Si 1-y Ge y , wherein y<x, 0<x≦1, 0≦y<1, and 0<w≦0.1.
12. The device according to claim 8 , wherein the first SRB layer comprises Ge 1-t Sn t and the second SRB layer comprises Si 1-x Ge x , and wherein each of the first upper layer and the second upper layer comprises Si 1-y Ge y , wherein y>x, 0<x<1, 0≦y<1, and 0<t≦0.1.