Semiconductor device and method for manufacturing semiconductor device
A protective diode has a basic structure including an n + layer, an n − layer, a p + layer, and an n − layer in this order. A p-type layer forming the protective diode is the p + layer with high impurity concentration. Therefore, the spreading of a depletion layer is suppressed and it is possible to reduce the area of the protective diode. In addition, phosphorus ions with a large diffusion coefficient are implanted to form the n − layer with low impurity concentration in the polysilicon layer forming the protective diode. A heat treatment is performed at a temperature of 1000° C. or higher to diffuse the phosphorus ions implanted into the polysilicon layer. Therefore, the impurity profile of the n − layer in the depth direction can be uniformized in the depth direction.
1. A method for manufacturing the semiconductor device, comprising:
forming a polysilicon layer on an insulating film;
implanting phosphorus ions into the polysilicon layer and performing a first heat treatment to form a first-conductivity-type semiconductor layer; and
selectively implanting boron ions and arsenic ions into regions of the first-conductivity-type semiconductor layer so as to form separated, different implanted regions and performing a second heat treatment of the separated, different implanted regions to form a plurality of third semiconductor regions and a plurality of first semiconductor regions, which reach the insulating film through the first-conductivity-type semiconductor layer in a depth direction and have a higher impurity concentration than the first-conductivity-type semiconductor layer, the plurality of third semiconductor regions and the plurality of first semiconductor regions being separated from each other by regions of the first-conductivity-type semiconductor layer that are not implanted with the boron ions and the arsenic ions,
wherein an end of the polysilicon layer comprises a first semiconductor region among the plurality of first semiconductor regions.
2. The method for manufacturing the semiconductor device according to claim 1 ,
wherein the first-conductivity-type semiconductor layer has a substantially constant impurity concentration in a thickness direction.
3. The method for manufacturing the semiconductor device according to claim 1 ,
wherein selectively implanting boron ions and arsenic ions comprises:
implanting the boron ions, using a first mask formed on the first-conductivity-type semiconductor layer, to form the plurality of third semiconductor regions; and
implanting the arsenic ions, using a second mask formed on the first-conductivity-type semiconductor layer, to form the plurality of first semiconductor regions, and
the width of a portion of the first-conductivity-type semiconductor layer covered by both the first mask and the second mask is equal to or greater than 1.2 μm and equal to or less than 1.8 μm.
4. The method for manufacturing the semiconductor device according to claim 1 ,
wherein, in the implantation of the phosphorus ions, the phosphorus ions are implanted with a dose that is equal to or greater than 2×10 14 cm −2 and equal to or less than 6×10 14 cm −2 .
5. The method for manufacturing the semiconductor device according to claim 1 ,
wherein the first heat treatment is performed at a temperature in a range of 1000° C. to 1200° C.