Superjunction device and semiconductor structure comprising the same
The present disclosure relates to a superjunction device and a semiconductor structure having the same. The superjunction device includes a body region of a second conduction type, a drain region of a first conduction type, a drift region located between said body region and said drain region. The drift region includes first regions of a first conduction type and second regions of a second conduction type arranged alternately along a direction being perpendicular to the direction from the body region to the drain region, and a plurality of trench gate structures, each of them comprising a trench extending into said drift region from an upper surface of said body region and a gate electrode in said trench surrounded by a first dielectric layer filling said trench, and a source region of a first conduction type embedded into said body region. There is no source region along at least 10% of the total interface length between the first dielectric layer and the body region.
1. A superjunction device, which comprises:
a drain region of a first conduction type;
a body region of a second conduction type;
a drift region located between said body region and said drain region, the drift region comprises first regions of a first conduction type and second regions of a second conduction type arranged alternately along a direction being perpendicular to the direction from the body region to the drain region;
a plurality of trench gate structures, each of them comprising a trench extending into said drift region from an upper surface of said body region and a gate electrode in said trench surrounded by a first dielectric layer filling said trench, thereby defining a vertical interface between the first dielectric layer and the body region having an interface length,
wherein a summation of the interface lengths defined by each of the plurality of trench gate structures comprises a total interface length of the superjunction device; and
a source region of a first conduction type embedded into said body region;
wherein there is no source region along at least 10% of the total interface length between the first dielectric layer and the body region,
wherein there is no source region on at least one side of at least 25% of said plurality of trench gate structures.
2. A superjunction device, which comprises:
a drain region of a first conduction type;
a body region of a second conduction type;
a drift region located between said body region and said drain region, the drift region comprises first regions of a first conduction type and second regions of a second conduction type arranged alternately along a direction being perpendicular to the direction from the body region to the drain region;
a plurality of trench gate structures, each of them comprising a trench extending into said drift region from an upper surface of said body region and a gate electrode in said trench surrounded by a first dielectric layer filling said trench, thereby defining a vertical interface between the first dielectric layer and the body region having an interface length,
wherein a summation of the interface lengths defined by each of the plurality of trench gate structures comprises a total interface length of the superjunction device; and
a source region of a first conduction type embedded into said body region;
wherein there is no source region along at least 10% of the total interface length between the first dielectric layer and the body region,
wherein there is no source region on both sides of at least 10% of said plurality of trench gate structures.
3. A superjunction device, which comprises:
a drain region of a first conduction type;
a body region of a second conduction type;
a drift region located between said body region and said drain region, the drift region comprises first regions of a first conduction type and second regions of a second conduction type arranged alternately along a direction being perpendicular to the direction from the body region to the drain region;
a plurality of trench gate structures, each of them comprising a trench extending into said drift region from an upper surface of said body region and a gate electrode in said trench surrounded by a first dielectric layer filling said trench, thereby defining a vertical interface between the first dielectric layer and the body region having an interface length,
wherein a summation of the interface lengths defined by each of the plurality of trench gate structures comprises a total interface length of the superiunction device; and
a source region of a first conduction type embedded into said body region;
wherein there is no source region along at least 10% of the total interface length between the first dielectric layer and the body region, and
wherein the trench gate structures which have no source region on both sides thereof are located in the second region of the second conduction type in the drift region.
4. The superjunction device according to claim 1 , wherein said first conduction type is n type and said second conduction type is p type, or said first conduction type is p type and said second conduction type is n type.