Electro-optical device and electronic device
An object of the present invention is to provide an EL display device having a high operation performance and reliability. The switching TFT 201 formed within a pixel has a multi-gate structure, which is a structure which imposes an importance on reduction of OFF current value. Further, the current control TFT 202 has a channel width wider than that of the switching TFT to make a structure appropriate for flowing electric current. Moreover, the LDD region 33 of the current control TFT 202 is formed so as to overlap a portion of the gate electrode 35 to make a structure which imposes importance on prevention of hot carrier injection and reduction of OFF current value.
1. A light emitting device comprising:
a plastic substrate;
a thin film transistor comprising a semiconductor film over the plastic substrate, a gate insulating film over the semiconductor film, and a gate electrode over the semiconductor film;
an insulating film over the thin film transistor;
a light emitting element over the insulating film, the light emitting element comprising:
a first electrode over the plastic substrate;
an emitting layer over the first electrode, the emitting layer including an organic material; and
a second electrode over the emitting layer;
a passivation film over the light emitting element, the passivation film comprising an aluminum oxide; and
a resin film over the passivation film,
wherein light emitted from the light emitting element is emitted in a direction opposite to the plastic substrate, and
wherein the thin film transistor is electrically connected to the light emitting element.
2. The light emitting device according to claim 1 , wherein the second electrode is an anode of the light emitting element.
3. The light emitting device according to claim 1 , wherein the passivation film possesses a heat radiation effect.
4. The light emitting device according to claim 1 , wherein the emitting layer comprises phosphorescence material.
5. The light emitting device according to claim 1 , further comprising a protecting electrode between the passivation film and the second electrode.
6. The light emitting device according to claim 1 , wherein the thin film transistor is an n channel transistor.
7. A semiconductor device comprising the light emitting device of claim 1 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, and a portable information terminal.
8. The light emitting device according to claim 1 , wherein the insulating film is a leveling film.
9. The light emitting device according to claim 1 , wherein the resin film has an irregular shape.
10. The light emitting device according to claim 1 , further comprising, a silicon nitride film between the plastic substrate and the semiconductor film.
11. A light emitting device comprising:
a plastic substrate;
a thin film transistor comprising a semiconductor film over the plastic substrate, a gate insulating film over the semiconductor film, and a gate electrode over the semiconductor film;
an insulating film over the thin film transistor, the insulating film comprising a resin material;
a light emitting element over the insulating film, the light emitting element comprising:
a first electrode;
an emitting layer over the first electrode, the emitting layer including an organic material; and
a second electrode over the emitting layer;
a passivation film over the light emitting element, the passivation film comprising aluminum oxide; and
a resin film over the passivation film,
wherein light emitted from the light emitting element is emitted in a direction opposite to the plastic substrate, and
wherein the thin film transistor is electrically connected to the light emitting element.
12. The light emitting device according to claim 11 , wherein the second electrode is an anode of the light emitting element.
13. The light emitting device according to claim 11 , wherein the passivation film possesses a heat radiation effect.
14. The light emitting device according to claim 11 , wherein the emitting layer comprises phosphorescence material.
15. The light emitting device according to claim 11 , further comprising a protecting electrode between the passivation film and the second electrode.
16. The light emitting device according to claim 11 , wherein the thin film transistor is an n channel transistor.
17. A semiconductor device comprising the light emitting device of claim 11 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, and a portable information terminal.
18. The light emitting device according to claim 11 , wherein the insulating film is a leveling film.
19. The light emitting device according to claim 11 , wherein the resin film has an irregular shape.
20. The light emitting device according to claim 11 , further comprising, a silicon nitride film between the plastic substrate and the semiconductor film.
21. A light emitting device comprising:
a plastic substrate;
a thin film transistor comprising a semiconductor film over the plastic substrate, a gate insulating film over the semiconductor film, and a gate electrode over the semiconductor film;
an insulating film over the thin film transistor, the insulating film comprising a resin material;
a light emitting element over the thin film transistor and the insulating film, the light emitting element comprising:
a first electrode;
an emitting layer over the first electrode, the emitting layer including an organic material; and
a second electrode over the emitting layer;
a first passivation film over the light emitting element, the first passivation film comprising aluminum oxide;
a second passivation film over the first passivation film, the second passivation film comprising a resin material; and
a resin film over the second passivation film,
wherein light emitted from the light emitting element is emitted in a direction opposite to the plastic substrate, and
wherein the thin film transistor is electrically connected the light emitting element.
22. The light emitting device according to claim 21 , wherein the first electrode is an anode.
23. The light emitting device according to claim 21 , wherein the first passivation film possesses a heat radiation effect.
24. The light emitting device according to claim 21 , wherein the emitting layer comprises phosphorescence material.
25. The light emitting device according to claim 21 , further comprising a protecting electrode between the first passivation film and the second electrode.
26. The light emitting device according to claim 21 , wherein the thin film transistor is an n channel transistor.
27. A semiconductor device comprising the light emitting device of claim 21 , wherein the semiconductor device is at least one member selected from a group consisting of a video camera, a digital camera, a goggle type display, a car navigation system, a personal computer, and a portable information terminal.
28. The light emitting device according to claim 21 , wherein the insulating film is a leveling film.
29. The light emitting device according to claim 21 , wherein the resin film has an irregular shape.
30. The light emitting device according to claim 21 , further comprising, a silicon nitride film between the plastic substrate and the semiconductor film.