Piezoelectric film-attached substrate, piezoelectric film element and method of manufacturing the same

1. A method of producing a piezoelectric film element, the method comprising:

laminating sequentially a lower electrode, a piezoelectric film having a perovskite structure, and an upper electrode on a substrate by sputtering;

executing irradiation of a surface of the piezoelectric film with an irradiation light having wavelength range of 400 nm to 800 nm, the irradiation executed before the upper electrode is formed and after the piezoelectric film is formed, the piezoelectric film formed in a thickness of 0.3 μm to 10 μm;

receiving a reflected light obtained by an interference of the irradiation light reflected on the surface of the piezoelectric film and the irradiation light transmitted through the piezoelectric film on the surface of the lower electrode;

obtaining a reflection spectrum showing a relation between the wavelength of the irradiation light and a reflectance calculated from the reflected light at each part of a center part and an outer peripheral part of the substrate; and

determining whether a warpage amount exceeds a defined value, the warpage amount being a difference of heights between the center part and the outer peripheral part of the substrate,

wherein the reflection spectrum in one part of the center part and the outer peripheral part of the substrate has at least one maximum value and at least one minimum value, and the reflectance at least at one maximum value is 0.4 or more, and the reflection spectrum in another part of a center part and the outer peripheral part has neither the maximum value nor the minimum value, or the reflectance at all maximum values of the reflection spectrum is less than 0.4.

2. A method of producing a piezoelectric film-attached substrate, the method comprising:

laminating sequentially a lower electrode and a piezoelectric film having a perovskite structure on a substrate by sputtering;

executing irradiation of a surface of the piezoelectric film with an irradiation light having a wavelength range of 400 nm to 800 nm, the irradiation executed after the piezoelectric film is formed, the piezoelectric film formed in a thickness of 0.3 μm to 10 μm;

receiving a reflected light obtained by an interference of the irradiation light reflected on the surface of the piezoelectric film and the irradiation light transmitted through the piezoelectric film and reflected on the surface of the lower electrode;

obtaining a reflection spectrum showing a relation between the wavelength of the irradiation light and a reflectance calculated from the reflected light at each part of a center part and an outer peripheral part of the substrate; and

determining whether a warpage amount exceeds a defined value, the warpage amount being a difference of heights between the center part and the outer peripheral part of the substrate,

wherein the reflection spectrum in one part of the center part and the outer peripheral part of the substrate has at least one maximum value and one minimum value, and the reflectance at least at one maximum value is 0.4 or more, and the reflection spectrum in another part of the center part and the outer peripheral part of the substrate has neither the maximum value nor the minimum value, or the reflectance at all maximum values of the reflection spectrum is less than 0.4.

3. The method of producing a piezoelectric film-attached substrate according to claim 2 , wherein the defined value is 60 μm.

4. The method of producing a piezoelectric film-attached substrate according to claim 2 , wherein it is determined that a surface roughness Ra of the piezoelectric film exceeds a defined value when the reflection spectrum has neither a maximum value nor a minimum value respectively at both of the center part and the outer peripheral part of the substrate, or the reflectance at all maximum values of the reflection spectrum is less than 0.4.

5. The method of producing a piezoelectric film-attached substrate according to claim 4 , wherein the defined value is 20 nm.

6. The method of producing a piezoelectric film-attached substrate according to claim 2 , comprising:

executing irradiation of the surface of the lower electrode with an irradiation light having a wavelength range of 400 nm to 800 nm, the irradiation executed before the piezoelectric film is formed and after the lower electrode is formed;

receiving a reflected light reflected on the surface of the lower electrode; and

determining that a reflectance calculated from the reflected light is 0.7 or more in a half or more region of the wavelength range of 400 nm to 800 nm.

7. The method of producing a piezoelectric film-attached substrate according to claim 2 , wherein the piezoelectric film comprises potassium sodium niobate expressed by a general formula (K 1-x Na x )NbO 3 (0<x<1).

8. The method of producing a piezoelectric film-attached substrate according to claim 2 , wherein the lower electrode is formed by:

a) an electrode layer composed of Pt, Ru, Ir, Sn, In, or oxides thereof, or

b) an electrode layer of a lamination structure including electrode layers of a).

9. The method of producing a piezoelectric film-attached substrate according to claim 2 , wherein the center part of the substrate indicates an area inside of r/3 and the outer peripheral part of the substrate indicates an area outside of 2r/3 on the substrate having a radius r.