Semiconductor device

1. A semiconductor device comprising:

a first wiring, a second wiring, a third wiring, a fourth wiring, a fifth wiring, and a plurality of storage elements connected in parallel between the first wiring and the second wiring,

wherein one of the plurality of storage elements includes a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; a second transistor having a second gate electrode, a second source electrode, and a second drain electrode; and a third transistor having a third gate electrode, a third source electrode, and a third drain electrode,

wherein the first transistor is provided in a substrate including a semiconductor material,

wherein the second transistor includes an oxide semiconductor layer,

wherein the first gate electrode and one of the second source electrode and the second drain electrode are electrically connected to each other,

wherein the first wiring and the third source electrode are electrically connected to each other,

wherein the third drain electrode and the first source electrode are electrically connected to each other,

wherein the second wiring and the first drain electrode are electrically connected to each other,

wherein the third wiring and the other of the second source electrode and the second drain electrode are electrically connected to each other,

wherein the fourth wiring and the second gate electrode are electrically connected to each other, and

wherein the fifth wiring and the third gate electrode are electrically connected to each other.

2. The semiconductor device according to claim 1 , wherein the first transistor includes a channel region provided in the substrate including the semiconductor material, impurity regions provided so as to sandwich the channel region, a first gate insulating layer over the channel region, the first gate electrode over the first gate insulating layer, and the first source electrode and the first drain electrode electrically connected to the impurity regions.

3. The semiconductor device according to claim 1 , wherein the second transistor includes the second gate electrode over the substrate including the semiconductor material, a second gate insulating layer over the second gate electrode, the oxide semiconductor layer over the second gate insulating layer, and the second source electrode and the second drain electrode electrically connected to the oxide semiconductor layer.

4. The semiconductor device according to claim 1 , wherein the third transistor includes a channel region provided in the substrate including the semiconductor material, impurity regions provided so as to sandwich the channel region, a third gate insulating layer over the channel region, the third gate electrode over the third gate insulating layer, and the third source electrode and the third drain electrode electrically connected to the impurity regions.

5. The semiconductor device according to claim 1 , wherein the substrate including the semiconductor material is one of a single crystal semiconductor substrate and an SOI substrate.

6. The semiconductor device according to claim 1 , wherein the semiconductor material is silicon.

7. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer comprises an In—Ga—Zn—O-based oxide semiconductor material.

8. The semiconductor device according to claim 1 , wherein the oxide semiconductor layer includes a crystal of In 2 Ga 2 ZnO 7 .

9. The semiconductor device according to claim 1 , wherein concentration of hydrogen in the oxide semiconductor layer is 5×10 19 /cm 3 or less.

10. The semiconductor device according to claim 1 , wherein an off-state current of the second transistor is 1×10 −13 A or less.

11. The semiconductor device according to claim 1 ,

wherein the second wiring is parallel to the third wiring, and

wherein the fourth wiring is parallel to the fifth wiring.

12. The semiconductor device according to claim 1 ,

wherein the second wiring is parallel to the fourth wiring, and

wherein the third wiring is parallel to the fifth wiring.

13. A semiconductor device comprising:

a first wiring, a second wiring, a third wiring, a fourth wiring, a fifth wiring, and a plurality of storage elements connected in parallel between the first wiring and the second wiring,

wherein one of the plurality of storage elements includes a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; a second transistor having a second gate electrode, a second source electrode, and a second drain electrode; a third transistor having a third gate electrode, a third source electrode, and a third drain electrode; and a capacitor,

wherein the first transistor is provided in a substrate including a semiconductor material,

wherein the second transistor includes an oxide semiconductor layer,

wherein the first gate electrode, one of the second source electrode and the second drain electrode, and one of electrodes of the capacitor are electrically connected to each other,

wherein the first wiring, the first source electrode, and the other of the electrodes of the capacitor are electrically connected to each other,

wherein the first drain electrode and the third source electrode are electrically connected to each other,

wherein the second wiring and the third drain electrode are electrically connected to each other,

wherein the third wiring and the other of the second source electrode and the second drain electrode are electrically connected to each other,

wherein the fourth wiring and the second gate electrode are electrically connected to each other, and

wherein the fifth wiring and the third gate electrode are electrically connected to each other.

14. The semiconductor device according to claim 13 , wherein the first transistor includes a channel region provided in the substrate including the semiconductor material, impurity regions provided so as to sandwich the channel region, a first gate insulating layer over the channel region, the first gate electrode over the first gate insulating layer, and the first source electrode and the first drain electrode electrically connected to the impurity regions.

15. The semiconductor device according to claim 13 , wherein the second transistor includes the second gate electrode over the substrate including the semiconductor material, a second gate insulating layer over the second gate electrode, the oxide semiconductor layer over the second gate insulating layer, and the second source electrode and the second drain electrode electrically connected to the oxide semiconductor layer.

16. The semiconductor device according to claim 13 , wherein the third transistor includes a channel region provided in the substrate including the semiconductor material, impurity regions provided so as to sandwich the channel region, a third gate insulating layer over the channel region, the third gate electrode over the third gate insulating layer, and the third source electrode and the third drain electrode electrically connected to the impurity regions.

17. The semiconductor device according to claim 13 , wherein the substrate including the semiconductor material is one of a single crystal semiconductor substrate and an SOI substrate.

18. The semiconductor device according to claim 13 , wherein the semiconductor material is silicon.

19. The semiconductor device according to claim 13 , wherein the oxide semiconductor layer comprises an In—Ga—Zn—O-based oxide semiconductor material.

20. The semiconductor device according to claim 13 , wherein the oxide semiconductor layer includes a crystal of In 2 Ga 2 ZnO 7 .

21. The semiconductor device according to claim 13 , wherein concentration of hydrogen in the oxide semiconductor layer is 5×10 19 /cm 3 or less.

22. The semiconductor device according to claim 13 , wherein an off-state current of the second transistor is 1×10 −13 A or less.