Thin film transistor and method for repairing the same, GOA circuit and a display device
The present disclosure provides a thin film transistor and method for repairing the same, GOA circuit and a display device, which aims to solve the problem that the source and/or drain of thin film transistor can not be repaired once it is short circuited with other conductive functional layers. The thin film transistor comprises a source, a drain, and a gate. The source and the drain have a comb shape and respectively comprise a plurality of comb-tooth portions and comb-handle portions for connecting each comb-tooth portion, and the gate is insulated from the source and the drain. Comb-tooth portions of the source are arranged by an interval with respect to comb-tooth portions of the drain. The comb-handle portion of the source and the gate do not overlap in their projections in the vertical direction, and the comb-handle portion of the drain and the gate do not overlap in their projections in the vertical direction.
1. A thin film transistor, comprising a source, a drain, and a gate, the source and the drain having a comb shape and respectively comprising a plurality of comb-tooth portions and comb-handle portions for connecting each comb-tooth portion, the gate being insulated from the source and the drain, and an active layer below the source and the drain,
wherein comb-tooth portions of the source are arranged by an interval with respect to comb-tooth portions of the drain, and
wherein the comb-handle portion of the source and the gate do not overlap in their projections in the vertical direction, and the comb-handle portion of the drain and the gate do not overlap in their projections in the vertical direction,
wherein a projection of the active layer in the vertical direction is located within a projection of the gate in the vertical direction, and
wherein two edges of the active layer at both sides with respect to its extending direction extend to ends of the comb-tooth portions of the source and ends of the comb-tooth portions of the drain, respectively.
2. The thin film transistor of claim 1 , wherein the comb-handle portion of the source and the comb-handle portion of the drain are belt-shaped comb-handle portions extending in a first direction which is perpendicular to the comb-tooth portions.
3. The thin film transistor of claim 2 , wherein the gate is a belt-shaped gate extending in the first direction.
4. The thin film transistor of claim 2 , wherein the active layer extends in the first direction and is belt shaped.
5. The thin film transistor of claim 4 , wherein the distance from one edge of the belt-shaped active layer to the comb-handle portion of the source equals to the distance from the other edge of the belt-shaped active layer to the comb-handle portion of the drain.
6. The thin film transistor of claim 1 , wherein comb-tooth portions of the source and comb-tooth portions of the drain are arranged in parallel with each other, and the distance between two neighboring comb-tooth portions is constant.
7. The thin film transistor of claim 1 , wherein the thin film transistor is a bottom gate type or a top gate type thin film transistor.
8. A method for repairing the thin film transistor of claim 1 , wherein when one or more comb-tooth portion of the source and/or drain of the thin film transistor is short circuited with the gate, at least disconnecting said one or more comb-tooth portion of the source and/or drain which is short circuited with the gate from the comb-handle portion of the source and/or drain by a cutting process, wherein a cutting area of the cutting process is positioned at the connection region between the comb-handle portion and said one or more comb-tooth portion, and the connection region and the gate do not overlap in their projections in the vertical direction.
9. The method of claim 8 , further comprising: when one or more comb-tooth portion of the source of the thin film transistor is short circuited with the gate, disconnecting comb-tooth portions of the drain near said one or more comb-tooth portion of the source which is short circuited with the gate from the comb-handle portion of the drain by a cutting process, wherein the cutting area of the cutting process is positioned at the connection region between the comb-handle portion and said one or more comb-tooth portion, and the connection region and the gate do not overlap in their projections in the vertical direction.
10. The method of claim 9 , wherein when one or more comb-tooth portion of the source of the thin film transistor is short circuited with the gate, disconnecting comb-tooth portions of the drain nearest to said one or more comb-tooth portion of the source which is short circuited with the gate from the comb-handle portion of the drain by a cutting process.
11. The method of claim 10 , further comprising: when one or more comb-tooth portion of the source of the thin film transistor is short circuited with the gate, disconnecting comb-tooth portions of the drain next nearest to said one or more comb-tooth portions of the source which is short circuited with the gate from the comb-handle portion of the drain by a cutting process.
12. The method of claim 8 , further comprising: when one or more comb-tooth portion of the drain of the thin film transistor is short circuited with the gate, disconnecting comb-tooth portions of the source near said one or more comb-tooth portion of the drain which is short circuited with the gate from the comb-handle portion of the source by a cutting process, wherein the cutting area of the cutting process is positioned at the connection region between the comb-handle portion and said one or more comb-tooth portion, and the connection region and the gate do not overlap in their projections in the vertical direction.
13. The method of claim 12 , wherein when one or more comb-tooth portion of the drain of the thin film transistor is short circuited with the gate, disconnecting comb-tooth portions of the source nearest to said one or more comb-tooth portion of the drain which is short circuited with the gate from the comb-handle portion of the source by a cutting process.
14. The method of claim 13 , further comprising: when one or more comb-tooth portion of the drain of the thin film transistor is short circuited with the gate, disconnecting comb-tooth portions of the source next nearest to said one or more comb-tooth portion of the drain which is short circuited with the gate from the comb-handle portion of the source by a cutting process.
15. A GOA circuit, comprising the thin film transistor of claim 1 .
16. A display device, comprising the GOA circuit of claim 15 .