Metal contact for semiconductor device
A semiconductor device package and packaging method, the semiconductor device packaging method comprising: providing a chip with a bonding pad formed on the chip surface; forming a passivation layer and a bump on the chip surface, wherein the passivation layer has an opening exposing part of the pad, the bump is located in the opening and the size of the bump is less than the size of the opening; forming a solder ball covering the top surface and the side wall of the bump, and the bottom surface of the opening. The formed semiconductor device package is not easy to form a short circuit. The bonding strength between the solder ball and the bump is high and the performance of the semiconductor device is stable.
1. A method for packaging a semiconductor device, comprising:
providing a chip with a pad formed thereon;
forming a passivation layer and a bump on a surface of the chip successively, wherein the passivation layer has an opening exposing a portion of the pad, the bump is located in the opening and the size of the bump is smaller than the size of the opening; and
forming a solder ball covering a surface of the bump, and a surface of the pad exposed by the opening,
wherein the bump is formed by a wire bonding process and comprises a plurality of overlapped sub bumps, and after the wire bonding process, the formed sub bumps are planished.
2. The method according to claim 1 , wherein the bump comprises a plurality of overlapped sub bumps, and the top sub bump among the plurality of overlapped sub bumps comprises a main body and an end portion formed on a surface of the main body.
3. The method according to claim 1 , wherein the bump comprises copper, gold, silver, copper alloy, gold alloy or silver alloy, and the solder ball comprises tin or tin alloy.
4. The semiconductor device formed by the method according to claim 1 , comprising:
the chip having the pad formed thereon;
the passivation layer formed on the surface of the chip, wherein the passivation layer has the opening exposing the portion of the pad;
the bump formed on the surface of the pad exposed by the opening, wherein the size of the bump is smaller than the size of the opening; and
the solder ball covering the surface of the bump and the surface of the pad exposed by the opening,
wherein the bump comprises a plurality of overlapped sub bumps, and the top sub bump among the plurality of overlapped sub bumps comprises a main body and an end portion formed on a surface of the main body.
5. The semiconductor device according to claim 4 , further comprising an anti-diffusion layer covering a top surface and a sidewall of the bump, wherein the solder ball is disposed on a surface of the anti-diffusion layer.
6. The semiconductor device according to claim 5 , wherein the anti-diffusion layer further covers the surface of the pad exposed by the opening.
7. The semiconductor device according to claim 5 , wherein the anti-diffusion layer comprises nickel.
8. The semiconductor device according to claim 5 , further comprising a wetting layer covering the anti-diffusion layer, wherein the solder ball is disposed on a surface of the wetting layer.
9. The semiconductor device according to claim 8 , wherein the wetting layer comprises at least one of tin, gold and silver.
10. The semiconductor device according to claim 4 , wherein the bump comprises copper, gold, silver, copper alloy, gold alloy or silver alloy, and the solder ball comprises tin or tin alloy.
11. The semiconductor device according to claim 5 , further comprising a wetting layer covering the anti-diffusion layer, wherein the solder ball is disposed on a surface of the wetting layer.
12. The method according to claim 1 , further comprising: forming an anti-diffusion layer covering the surface of the bump before the solder ball is formed.
13. The method according to claim 12 , wherein the anti-diffusion layer further covers the surface of the pad exposed by the opening.
14. The method according to claim 12 , further comprising: forming a wetting layer covering the anti-diffusion layer.
15. The method according to claim 14 , wherein the wetting layer is formed by a chemical plating process, and comprises at least one of tin, gold and silver.
16. The method according to claim 13 , further comprising: forming a wetting layer covering the anti-diffusion layer.