Active matrix light emitting diodes display module with carbon nanotubes control circuits and methods of fabrication

1. Monolithically integrated single-walled carbon nanotube (SWCNT) control circuits on a backside of a crystalline semiconductor light emitting diode array to form an active matrix light emitting diode (AMLED) module, wherein: application of a voltage greater than 2.5 V to light emitting diode results in light emission; comprising:

a stack of crystalline semiconductor layers with interconnected N and discrete P electrodes on a substrate;

a protection layer over the crystalline semiconductor layers;

patterned single-walled carbon nanotube layers to form driving and switching transistors on the protection layer;

patterned drain/source electrodes of the driving and switching transistors on SWCNT layers;

a dielectric layer over the SWCNT layers and the drain/source electrodes of the driving and switching transistors; and

patterned gate electrodes of the driving and switching transistors on the dielectrics layer;

wherein the drain electrodes of the driving transistors are connected to the P electrodes through VIA holes; and the gate electrodes of the driving transistors are connected to the drain electrodes of the switching transistors through the VIA holes, and the driving and switching transistors form a top-gated geometry and have a field effect mobility greater than 180 cm2/Vs and an ON/OFF ratio of greater than 10 6 .

2. The active matrix light emitting diodes display module of claim 1 , wherein the application of a voltage greater than 4.0 V produces light emission with an intensity greater than 15,000 Cd.

3. The active matrix light emitting diodes of claim 1 , wherein the single-walled carbon nanotubes selected for the single-walled carbon nanotubes control circuits are a mixture of at least two distinct indexes of the group consisting of a high purity single chirality single-walled carbon nanotubes with indexes of (6,4), (9,1), (6,5), (8,3), (7,3), (10,2), (8,4) and (9,2).

4. The active matrix light emitting diodes of claim 1 , wherein the light emitting diode pixels are 10 μm2 squares.

5. The active matrix light emitting diodes of claim 1 , wherein the switching and driving transistor gate electrodes are formed of a dual layer of chromium and gold, wherein the chromium has a thickness between 150 nm and 500 nm and the gold has a thickness of between 10 nm and 100 nm.

6. The active matrix light emitting diodes of claim 1 , wherein the driving transistor has a channel length of between 10 and 58 μm.

7. The active matrix light emitting diodes of claim 1 , wherein the switching transistor has a channel length of between 7 and 21 μm.

8. The active matrix light emitting diodes of claim 1 , wherein the drain electrode of the switching and driving transistors and the source electrode of the switching and driving transistors are comprised of a double layer of chromium/gold.

9. The active matrix light emitting diodes of claim 8 , wherein the chromium of the transistor drain electrode and the transistor source electrode has a thickness between 300 nm and 500 nm and a width between 100 nm and 20 μm.