Semiconductor device
A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate is disclosed. The IGBT region includes: a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate; a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer and has a higher impurity concentration of the first conductivity type than the body layer; an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer; a drift layer; a collector layer; and a gate electrode. In the semiconductor device, a part of the body contact layer placed at a long distance from the diode region is made larger than a part of the body contact layer placed at a short distance from the diode region.
1. A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate,
the IGBT region comprising:
a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate;
a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer, the body contact layer having a higher impurity concentration of the first conductivity type than the body layer;
an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer;
a drift layer of the second conductivity type that is formed on a back surface side of the body layer;
a collector layer of the first conductivity type that is formed on a back surface side of the drift layer; and
a gate electrode covered with an insulator film and placed inside a trench,
wherein
a part of the body contact layer placed at a long distance from the diode region is made larger than a part of the body contact layer placed at a short distance from the diode region.
2. The semiconductor device as set forth in claim 1 , wherein
a part of the body contact layer placed in a part of the IGBT region in which trench pitch is wide is made larger than a part of the body contact layer placed in a part of the IGBT region in which trench pitch is narrow.
3. The semiconductor device as set forth in claim 1 , wherein
a part of the body contact layer placed near a part of the IGBT region in which trench depth is great is made larger than a part of the body contact layer placed near a part of the IGBT region in which trench depth is shallow.
4. A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate,
the IGBT region comprising:
a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate;
a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer, the body contact layer having a higher impurity concentration of the first conductivity type than the body layer;
an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer;
a drift layer of the second conductivity type that is formed on a back surface side of the body layer;
a collector layer of the first conductivity type that is formed on a back surface side of the drift layer; and
a gate electrode covered with an insulator film and placed inside a trench,
wherein
a part of the body contact layer placed in a part of the IGBT region in which trench pitch is wide is made larger than a part of the body contact layer placed in a part of the IGBT region in which trench pitch is narrow.
5. A semiconductor device in which an IGBT region and a diode region are formed on one semiconductor substrate,
the IGBT region comprising:
a body layer of a first conductivity type that is formed on a front surface of the semiconductor substrate;
a body contact layer of the first conductivity type that is partially formed on a front surface of the body layer, the body contact layer having a higher impurity concentration of the first conductivity type than the body layer;
an emitter layer of a second conductivity type that is partially formed on the front surface of the body layer;
a drift layer of the second conductivity type that is formed on a back surface side of the body layer;
a collector layer of the first conductivity type that is formed on a back surface side of the drift layer; and
a gate electrode covered with an insulator film and placed inside a trench,
wherein
a part of the body contact layer placed near a part of the IGBT region in which trench depth is great is made larger than a part of the body contact layer placed near a part of the IGBT region in which trench depth is shallow.