Light transmissive electrode, organic photoelectric device, and image sensor
According to example embodiments, a transmissive electrode may include a light transmission layer. The light transmission layer may include a metal and a metal oxide that is included in a smaller amount than the metal. According to example embodiments, an organic photoelectric device, as well as an image sensor, may include the transmissive electrode.
1. A transmissive electrode, comprising:
a single light transmission layer including a metal and a metal oxide that is included in a smaller amount than the metal, wherein
the metal oxide of the light transmission layer is a dopant in the metal of the light transmission layer,
a sheet resistance of the light transmission layer is less than or equal to about 1 kΩ/sq, and
a light transmittance of the light transmission layer is more than about 50% at a wavelength of about 540 nm.
2. The transmissive electrode of claim 1 , wherein a weight ratio of the metal and the metal oxide in the light transmission layer is about 99.9:0.1 to about 60:40.
3. The transmissive electrode of claim 1 , wherein
the metal includes at least one of silver (Ag), aluminum (Al), copper (Cu), gold (Au), and an alloy thereof, and
the metal oxide includes one of molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, niobium oxide, tantalum oxide, titanium oxide, zinc oxide, nickel oxide, copper oxide, cobalt oxide, manganese oxide, chromium oxide, indium oxide, and a combination thereof.
4. The transmissive electrode of claim 1 , wherein a thickness the light transmission layer is about 1 nm to about 50 nm.
5. The transmissive electrode of claim 1 , further comprising:
a light transmission auxiliary layer on one side of the light transmission layer.
6. The transmissive electrode of claim 5 , wherein a material of the light transmission auxiliary layer has a refractive index of about 1.6 to about 2.5.
7. The transmissive electrode of claim 5 , wherein the light transmission auxiliary layer includes at least one of a metal oxide compound, a metal sulfide, and an organic material.
8. The transmissive electrode of claim 7 , wherein
the metal oxide compound includes one of zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum oxide, aluminum tin oxide (ATO), fluorine doped tin oxide (FTO), molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, niobium oxide, tantalum oxide, titanium oxide, nickel oxide, copper oxide, cobalt oxide, manganese oxide, chromium oxide, and a combination thereof,
the metal sulfide includes zinc sulfide (ZnS), and
the organic material is an amine derivative.
9. An organic photoelectric device, comprising:
a first electrode;
a second electrode on the first electrode,
at least one of the first electrode and the second electrode including the transmissive electrode of claim 1 ; and
an active layer between the first electrode and second electrode.
10. The organic photoelectric device of claim 9 , wherein a weight ratio of the metal and the metal oxide in the transmissive electrode is about 99.9:0.1 to about 60:40.
11. The organic photoelectric device of claim 9 , wherein the metal in the transmissive electrode includes at least one of silver (Ag), aluminum (Al), copper (Cu), gold (Au), and an alloy thereof.
12. The organic photoelectric device of claim 9 , wherein the metal oxide in the transmissive electrode comprises one of molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, niobium oxide, tantalum oxide, titanium oxide, zinc oxide, nickel oxide, copper oxide, cobalt oxide, manganese oxide, chromium oxide, indium oxide, and a combination thereof.
13. The organic photoelectric device of claim 9 , wherein a thickness of the light transmission layer in the transmissive electrode is about 1 nm to about 50 nm.
14. The organic photoelectric device of claim 9 , wherein the transmissive electrode further includes a light transmission auxiliary layer on one side of the light transmission layer.
15. The organic photoelectric device of claim 14 , wherein a material of the light transmission auxiliary layer has a refractive index of about 1.6 to about 2.5.
16. The organic photoelectric device of claim 15 , wherein the light transmission auxiliary layer comprises at least one of a metal oxide compound, a metal sulfide, and an organic material.
17. The organic photoelectric device of claim 16 , wherein
the metal oxide compound includes one of zinc oxide, indium oxide, tin oxide, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum oxide, aluminum tin oxide (ATO), fluorine doped tin oxide (FTO), molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, niobium oxide, tantalum oxide, titanium oxide, nickel oxide, copper oxide, cobalt oxide, manganese oxide, chromium oxide, and a combination thereof,
the metal sulfide comprises zinc sulfide (ZnS), and
the organic material comprises an amine derivative.
18. The organic photoelectric device of claim 9 , further comprising:
a charge auxiliary layer between at least one of the first electrode and the active layer and the second electrode and the active layer.
19. An image sensor comprising:
the organic photoelectric device according to claim 9 .
20. An organic light emitting diode (OLED) comprising the transmissive electrode according to claim 1 .