Active matrix organic light-emitting diode array substrate, manufacturing method thereof and display device including the same
An active matrix organic light-emitting diode array substrate, a manufacturing method thereof and a display device including the same are disclosed to improve the aperture ratio of pixel of the array substrate and the display quality of the display device. The array substrate includes: a substrate; and a plurality of pixel units located on the substrate and arranged in array manner, each of the pixel units comprising a thin film transistor, a first transparent electrode, a second transparent electrode and a gate insulation layer provided between the first transparent electrode and the second transparent electrode. The first transparent electrode is provided on the substrate and is electrically connected to a gate of the thin film transistor; and the second transparent electrode is electrically connected to a drain of the thin film transistor, and the second transparent electrode is positioned opposite to the first transparent electrode to form a storage capacitor of the pixel unit therebetween.
1. An active matrix organic light-emitting diode array substrate, comprising:
a substrate; and
a plurality of pixel units located on the substrate and arranged in an array, each of the pixel units comprising a thin film transistor, a first transparent electrode, a second transparent electrode and a gate insulation layer provided between the first transparent electrode and the second transparent electrode;
wherein, the first transparent electrode is provided on the substrate and is electrically connected to a gate of the thin film transistor; the second transparent electrode is electrically connected to a drain of the thin film transistor, and the second transparent electrode and the first transparent electrode are positioned opposite to each other to form a storage capacitor of the pixel unit therebetween.
2. The active matrix organic light-emitting diode array substrate of claim 1 , wherein, the first transparent electrode and the second transparent electrode have the same electrode pattern.
3. The active matrix organic light-emitting diode array substrate of claim 1 , wherein, the first transparent electrode is partly lapped over an upper surface of the gate.
4. The active matrix organic light-emitting diode array substrate of claim 1 , wherein, the first transparent electrode is used as a bottom electrode of the storage capacitor of the pixel unit, and the second transparent electrode is used as a pixel electrode of the pixel unit as well as a top electrode of the storage capacitor of the pixel unit.
5. The active matrix organic light-emitting diode array substrate of claim 1 , wherein, a first insulation layer is formed on the thin film transistor, and the second insulation layer is electrically connected with the drain of the thin film transistor through a via formed in the first insulation layer.
6. A display device comprising the active matrix organic light-emitting diode array substrate of claim 1 .
7. The display device of claim 6 , wherein, the first transparent electrode and the second transparent electrode have the same electrode pattern.
8. The display device of claim 6 , wherein, the first transparent electrode is partly lapped over an upper surface of the gate.
9. The display device of claim 6 , wherein, the first transparent electrode is used as a bottom electrode of the storage capacitor of the pixel unit, and the second transparent electrode is used as a pixel electrode of the pixel unit as well as a top electrode of the storage capacitor of the pixel unit.
10. The display device of claim 6 , wherein, a first insulation layer is formed on the thin film transistor, and the second transparent electrode is electrically connected with the drain of the thin film transistor through a via formed in the first insulation layer.
11. A manufacturing method for an active matrix organic light-emitting diode array substrate, comprising steps of:
forming a gate of a thin film transistor on a substrate;
forming a first transparent electrode electrically connected to the gate;
forming a gate insulation layer on the gate and the first transparent electrode;
forming an active layer, a source and a drain of the thin film transistor on the gate insulation layer; and
forming a second transparent electrode electrically connected to the drain of the thin film transistor and opposite to the first transparent electrode.
12. The manufacturing method of claim 11 , wherein, the first transparent electrode and the second transparent electrode are formed by a mask with the same pattern.
13. The manufacturing method of claim 11 , wherein, in the step of forming the first transparent electrode electrically connected to the gate, the first transparent electrode is partly lapped over an upper surface of the gate formed on the substrate.
14. The manufacturing method of claim 11 , wherein, in the step of forming the active layer, the source and the drain of the thin film transistor on the gate insulation layer, a first insulation layer is formed on the active layer, the source and the drain, and a via through which the drain of the thin film transistor is connected with the second transparent electrode is formed in the first insulation layer.