IP Library › Granted Patent US 9,385,194
Granted Patent B2
US 9,385,194 · App. 13/478,961 · Granted Jul 5, 2016

Nanoparticles and methods of manufacturing the same

Inventors: Kyung-sang Cho (Gwacheon-si, KR); Byoung-lyong Choi (Seoul, KR); Tae-ho Kim (Suwon-si, KR)
Assignee: SAMSUNG ELECTRONICS CO., LTD.
H01L29/0665B82Y10/00B82Y30/00B82Y40/00C01B19/002C01B19/007H01L29/127H01L29/20H01L29/22C01P2002/82C01P2006/40H01L29/7613
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Quick Facts
Patent No.
US 9,385,194
App. No.
13/478,961
Granted
Jul 5, 2016
Kind
B2
Abstract

A method of manufacturing nanoparticles including: providing a metal chalcogenide complexes (MCC) hydrazine hydrate solution; providing a first organic solution of nanoparticles with first organic ligands; forming a mixed solution by mixing the MCC hydrazine hydrate solution and the first organic solution of nanoparticles capped with the first organic ligands; and replacing the first organic ligands of the nanoparticles with ligands of the MCC hydrazine hydrate.

Claims (12)

1. A particle comprising:

a nanoparticle comprising a semiconductor material in which each dimension is less than 100 nm; and

inorganic ligands coupled to a surface of the nanoparticle, said inorganic ligands comprising hydrazine hydrate,

wherein the inorganic ligands are a metal chalcogenide complex comprising hydrazine hydrate of Sn 2 S 6 , Sn 2 Se 6 , In 2 Se 4 , In 2 Te 3 , Ga 2 Se 3 , CuInSe 2 , Cu 7 S 4 , Hg 3 Se 4 , Sb 2 Te 3 , or ZnTe.

2. The particle of claim 1 , wherein the hydrazine hydrate comprises a monohydrate, dihydrate, trihydrate, tetrahydrate, pentahydrate, hexahydrate, or a combination thereof.

3. The particle of claim 1 , wherein the nanoparticle comprises CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, CdHgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, or HgZnSTe; GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, or InAlPSb; SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, or SnPbSTe; Si, Ge, SiC, SiGe, or a combination of two or more of them.

4. The particle of claim 1 , the nanoparticle has a core-shell structure or a core-shell-shell structure.

5. A solution of a particles comprising:

the particles of claim 1 ; and

a solvent dissolving or dispersing the particles,

wherein the solvent comprises ethanolamine, dimethyl sulfoxide, dimethylformamide, or formamide.

6. The particle of claim 1 , wherein the nanoparticle comprises CdSe/CdS/ZnS, and the inorganic ligands include Sn 2 S 6 hydrazine monohydrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 10, 2015
From: CHO, KYUNG-SANG; CHOI, BYOUNG-LYONG; KIM, TAE-HO
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 036531/0019 →
Priority Claims (1)
KR 10-2011-0106637 · Oct 18, 2011 · national
Continuity (1)
Related Publication 20130092885A1 · Apr 18, 2013